Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applications

Solid-State Electronics

Volumn 63, Issue 1, 2011, Pages 189-191

  Huang, Sheng Yao ^a   Chang, Ting Chang ^a,b   Chen, Min Chen ^a   Chen, Shih Ching ^a   Lo, Hung Ping ^c   Huang, Hui Chun ^a   Gan, Der Shin ^a   Sze, Simon M ^c   Tsai, Ming Jinn ^d  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Nonvolatile memory; Resistance switching; Samarium oxide (Sm2O3)

Indexed keywords

CONDUCTION MECHANISM; CONDUCTIVE FILAMENTS; ENDURANCE TEST; HIGH-RESISTANCE STATE; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; OHMIC BEHAVIOR; RESISTANCE RATIO; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RETENTION CHARACTERISTICS; SAMARIUM OXIDES; SPACE-CHARGE-LIMITED CURRENT;

OXIDE FILMS; SAMARIUM;

THIN FILMS;

EID: 80051792759     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.04.012     Document Type: Article

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