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Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 2805-2809

Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

(6) Valdueza Felip, S a Ibanez J b Monroy, E c Gonzalez Herraez M a Artus L b Naranjo, F B a

a UNIVERSITY OF ALCALÁ (Spain)

b INSTITUTE OF EARTH SCIENCES JAUME ALMERA (Spain)

c CEA GRENOBLE (France)

Author keywords

Indium nitride; Photoluminescence; Raman; Semiconductors; Sputtering; X ray diffraction

Indexed keywords

AVERAGE GRAIN SIZE; CRYSTALLINE QUALITY; DEPOSITION CONDITIONS; GAN TEMPLATE; HIGH GROWTH RATE; HIGH QUALITY; INDIUM NITRIDE; INN FILMS; INN LAYERS; NANOCRYSTALLINES; OPTICAL QUALITIES; PL EMISSION; RADIO FREQUENCY SPUTTERING; RAMAN; RAMAN SCATTERING SPECTROSCOPY; RF-SPUTTERING; ROOM TEMPERATURE; ROOT MEAN SQUARE ROUGHNESS; SI (1 1 1); SI(111) SUBSTRATE; STRUCTURAL AND OPTICAL PROPERTIES; STRUCTURAL QUALITIES; WURTZITES;

BUFFER LAYERS; GALLIUM NITRIDE; GRAIN GROWTH; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTOR MATERIALS; SILICON; SPUTTERING; THICK FILMS; X RAY DIFFRACTION; ZINC SULFIDE;

SEMICONDUCTOR GROWTH;

EID: 84856386577 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.12.034 Document Type: Article

Times cited : (15)

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