High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

Physica Status Solidi (A) Applications and Materials Science

Volumn 208, Issue 1, 2011, Pages 65-69

  Valdueza Felip, Sirona ^a   Naranjo, Fernando B ^a   González Herráez, Miguel ^a   Lahourcade, Lise ^b   Monroy, Eva ^b   Fernández, Susana ^c  

^a UNIVERSITY OF ALCALÁ   (Spain)

^b CEA GRENOBLE   (France)

^c CIEMAT   (Spain)

Author keywords

atomic force microscopy; InN; optical properties; sputtering; X ray diffraction

Indexed keywords

ABSORPTION BAND; CRYSTALLOGRAPHIC STRUCTURE; DEPOSITION PARAMETERS; GAN TEMPLATE; INN; INN FILMS; INN LAYERS; MORPHOLOGICAL PROPERTIES; NANOCRYSTALLINES; OPTIMIZED DEPOSITION CONDITIONS; PREFERRED GROWTH; PURE NITROGEN ATMOSPHERE; RADIO-FREQUENCY SPUTTERING; RF-POWER; RF-SPUTTERING; ROOT MEAN SQUARES; SAPPHIRE TEMPLATES; SPUTTERING PRESSURES; SUBSTRATE TEMPERATURE; WURTZITES; X-RAY DIFFRACTION MEASUREMENTS;

ATOMIC FORCE MICROSCOPY; DIFFRACTION; GALLIUM ALLOYS; GALLIUM NITRIDE; SURFACE ROUGHNESS; X RAY DIFFRACTION; X RAYS; ZINC SULFIDE;

OPTICAL PROPERTIES;

EID: 78651370948     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200925636     Document Type: Article

References (27)

1. X. D. Pu, W. Z. Shen, Z. Q. Zhang, H. Ogawa, and, Q. X. Guo, Appl. Phys. Lett. 88, 151904 (2006).
2. S. Strite, and, H. MorkoÇ, J. Vac. Sci. Technol. B 10, 1237 (1992).
3. O. Ambacher, J. Phys. D 31, 2653 (1998).
4. A. Koukitu, N. Takahashi, and, H. Seki, Jpn. J. Appl. Phys. 36, L1136 (1997).
5. T. Yamaguchi, D. Muto, T. Araki, and, Y. Nanishi, J. Cryst. Growth 311, 2780 (2009).
6. O. Briot, S. Ruffenach, M. Moret, B. Gil, Ch. Giesen, M. Heuken, S. Rushworth, T. Leese, and, M. Succi, J. Cryst. Growth 311, 2761 (2009).
7. K. Mitamura, T. Honke, J. Ohta, A. Kobayashi, H. Fujioka, and, M. Oshima, J. Cryst. Growth 311, 1316 (2009).
8. M. Alevli, G. Durkaya, A. Weerasekara, A. G. U. Perera, N. Dietz, W. Fenwick, V. Woods, and, I. Ferguson, Appl. Phys. Lett. 89, 112119 (2006).
9. A. G. Bhuiyan, A. Hashimoto, and, A. Yamamoto, J. Appl. Phys. 94, 2779 (2003).
10. S. Inoue, T. Namazu, T. Suda, and, K. Koterazawa, Vacuum 74, 443 (2004).
11. Q. X. Guo, T. Tanaka, M. Nishio, H. Ogawa, X. D. Pu, and, W. Z. Shen, Appl. Phys. Lett. 86, 231913 (2005).
12. H. Shinoda, and, N. Mutsukura, Thin Solid Films 503, 8 (2005).
13. Q. Guo, M. Ogata, Y. Ding, T. Tanaka, and, M. Nishio, J. Cryst. Growth 311, 2783 (2009).
14. K. P. Biju, and, M. K. Jain, Appl. Surf. Sci. 254, 72595 (2008).
15. S. Valdueza-Felip, F. B. Naranjo, M. González-Herráez, L. Lahourcade, E. Monroy, and, S. Fernández, J. Cryst. Growth (2010); 10.1016/j.jcrysgro.2010.05.036.
16. W. Paszkowicz, R. Cerny, and, S. Krukowski, Powder Diffr. 18, 114 (2003).
17. S. Yamaguchi, M. Kariya, S. Nitta, T. Takeuchi, C. Wetzel, H. Amano, and, I. Akasaki, J. Appl. Phys. 85, 7682 (1999).
18. Q. Guo, N. Shingai, Y. Mitsuishi, M. Nishio, and, H. Ogawa, Thin Solid Films 343, 527 (1999).
19. H. Cheng, Y. Sun, and, P. Hing, Thin Solid Films 434, 112 (2003).
20. I. Sugimoto, S. Nakano, and, H. Kuwano, J. Appl. Phys. 75, 7710 (1994).
21. F. B. Naranjo, M. González-Herráez, H. Fernández, J. Solís, and, E. Monroy, Appl. Phys. Lett. 90, 091903 (2007).
22. K. S. A. Butcher, and, T. L. Tansley, Superlatt. Microstruct. 38, 1 (2005).
23. J. Wu, W. Walukiewicz, S. X. Li, R. Armitage, J. C. Ho, E. R. Weber, E. E. Haller, Hai Lu, W. J. Schaff, A. Barcz, and, R. Jakiela, Appl. Phys. Lett. 84, 2805 (2004).
24. R. T. Shamrell, and, C. Parman, Opt. Mater. 13, 289 (1999).
25. I. Sugimoto, S. Nakano, and, H. Kuwano, J. Appl. Phys. 75, 12 (1994).
26. N. Saito, and, Y. Igasaki, Appl. Surf. Sci. 169, 349 (2001).
27. E. Trybus, G. Namkoong, W. Henderson, S. Burnham, W. Alan Doolittle, M. Cheung, and, A. Cartwright, J. Cryst. Growth 288, 218 (2006).