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Volumn 312, Issue 19, 2010, Pages 2689-2694

Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering

(6) Valdueza Felip, S a Naranjo, F B a Gonzalez Herraez M a Lahourcade, L b Monroy, E b Fernandez S c

a Escuela Politécnica (Spain)

b CEA GRENOBLE (France)

c CIEMAT (Spain)

Author keywords

A1. Atomic force microscopy; A1. X ray diffraction; A3. Polycrystalline deposition; B1. Nitrides; B2. Semiconductor IIIV materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOCRYSTALS; OPTICAL PROPERTIES; SAPPHIRE; SILICON COMPOUNDS; SPUTTERING; SUBSTRATES; SURFACE ROUGHNESS; TEMPERATURE; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION; ZINC SULFIDE;

CRYSTALLOGRAPHIC STRUCTURE; LOW TEMPERATURE PHOTOLUMINESCENCE; OPTIMIZED DEPOSITION CONDITIONS; POLY CRYSTALLINE DEPOSITION; ROOT MEAN SQUARE ROUGHNESS; SEMICONDUCTOR III-V MATERIALS; STRUCTURAL AND OPTICAL PROPERTIES; X-RAY DIFFRACTION MEASUREMENTS;

INDIUM COMPOUNDS;

EID: 77956186549 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2010.05.036 Document Type: Article

Times cited : (16)

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