Applications of ZnO:Al deposited by RF sputtering to InN low-cost technology

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 7, 2010, Pages 1717-1721

  Fernandez S ^a   Naranjo, F B ^b   Valdueza Felip, S ^b   De Abril, O ^c  

^a CIEMAT   (Spain)

^b UNIVERSITY OF ALCALÁ   (Spain)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

Contact resistance; Doping; Heterojunctions; Optoelectronic application; Sputtering; ZnO

Indexed keywords

DEPOSITED LAYER; DIFFERENT SUBSTRATES; DOPING; HETEROSTRUCTURES; LOW TEMPERATURES; LOW-COST TECHNOLOGY; OHMIC BEHAVIOUR; OPTOELECTRONIC APPLICATIONS; POST DEPOSITION TREATMENT; RADIO FREQUENCY SPUTTERING; RF-SPUTTERING; SPECIFIC CONTACT RESISTANCES; ZNO;

ALUMINUM; CONTACT RESISTANCE; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; SPUTTERING;

ZINC OXIDE;

EID: 77955602620     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200983725     Document Type: Article

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