Structural and electrical properties of reactively sputtered InN thin films on AlN-buffered (00.1) sapphire substrates: Dependence on buffer and film growth temperatures and thicknesses

Journal of Applied Physics

Volumn 74, Issue 3, 1993, Pages 1684-1691

  Kistenmacher, T J ^a   Ecelberger, S A ^a   Bryden, W A ^a  

^a JOHNS HOPKINS UNIVERSITY   (United States)

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[No Author keywords available]

Indexed keywords

EID: 0000626311     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.354822     Document Type: Article

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