InN films deposited by rf reactive sputtering in pure nitrogen gas

Vacuum

Volumn 74, Issue 3-4 SPEC. ISS., 2004, Pages 443-448

  Inoue, S ^a   Namazu, T ^a   Suda, T ^a   Koterazawa, K ^a  

^a UNIVERSITY OF HYOGO   (Japan)

Author keywords

Crystal structure; Indium nitride; Optical properties; rf reactive sputtering

Indexed keywords

CRYSTAL STRUCTURE; DISSOCIATION; EPITAXIAL GROWTH; GLASS; INDIUM COMPOUNDS; LOW TEMPERATURE EFFECTS; OPTICAL FILMS; PRESSURE EFFECTS; SEMICONDUCTOR MATERIALS; SPUTTER DEPOSITION;

INDIUM NITRIDE; LOW TEMPERATURE FILM GROWTH; RED LIGHT EMITTERS; RF REACTIVE SPUTTERING;

NITROGEN;

EID: 2442616785     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2004.01.010     Document Type: Article

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