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Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2780-2782

Growth and characterization of N-polar and In-polar InN films by RF-MBE

(4) Yamaguchi, T a Muto, D a Araki, T a Nanishi, Y a

a RITSUMEIKAN UNIVERSITY (Japan)

Author keywords

A1. High resolution X ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

A1. HIGH-RESOLUTION X-RAY DIFFRACTION; A3. MOLECULAR BEAM EPITAXY; B1. NITRIDES; ELECTRICAL PROPERTY; GROWTH CONDITIONS; INN FILMS; STRUCTURAL AND ELECTRICAL PROPERTIES; X RAY ROCKING CURVE;

CRYSTAL GROWTH; DIFFRACTION; ELECTRIC PROPERTIES; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NITRIDES; SEMICONDUCTOR QUANTUM WIRES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

MOLECULAR BEAM EPITAXY;

EID: 65749090634 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2009.01.034 Document Type: Article

Times cited : (16)

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