The effect of rf power on the growth of InN films by modified activated reactive evaporation

Applied Surface Science

Volumn 254, Issue 22, 2008, Pages 7259-7265

  Biju, Kuyyadi P ^a   Jain, Mahaveer K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY MADRAS   (India)

Author keywords

InN; Modified activated reactive evaporation

Indexed keywords

CARRIER CONCENTRATION; ELECTRODES; ENERGY GAP; EVAPORATION; FILM GROWTH; III-V SEMICONDUCTORS; NITROGEN; OPTICAL PROPERTIES; SUBSTRATES;

C-AXIS ORIENTATIONS; ELECTRICAL AND OPTICAL PROPERTIES; GLASS SUBSTRATES; GROUP III NITRIDES; MODIFIED ACTIVATED REACTIVE EVAPORATION; MOSS-BURSTEIN SHIFT; OPTICAL AND ELECTRICAL PROPERTIES; SUBSTRATE MATERIAL;

NITROGEN COMPOUNDS;

EID: 50549100615     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.05.297     Document Type: Article

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