Studies of the chemical and electrical properties of fullerene and 3-aminopropyltrimethoxysilane based low-k materials

Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 2498-2504

  Klocek, Jolanta ^a   Henkel, Karsten ^a   Kolanek, Krzysztof ^a   Broczkowska, Katarzyna ^b   Schmeisser, Dieter ^a   Miller, Mirosław ^b,c   Zschech, Ehrenfried ^d  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^c WROCLAW RESEARCH CENTRE EIT   (Poland)

^d FRAUNHOFER INSTITUTE FOR NON DESTRUCTIVE TESTING   (Germany)

Author keywords

3 Aminopropyltrimethoxysilane (APTMS); Atomic force microscopy (AFM); Capacitance voltage characterization (CV); Fullerenes; X ray photoelectron spectroscopy (XPS)

Indexed keywords

ATOMIC FORCE MICROSCOPY; BUTYRIC ACID; CAPACITANCE; CHEMICAL ANALYSIS; DIELECTRIC MATERIALS; FILM PREPARATION; FULLERENES; LOW-K DIELECTRIC; PHOTOELECTRONS; PHOTONS; THIN FILMS;

3-AMINOPROPYLTRIMETHOXYSILANE; CAPACITANCE VOLTAGE; FULLERENE APPLICATION; INFORMATION CONCERNING; LOW DIELECTRIC CONSTANTS; SOLUBLE DERIVATIVES; SURFACE TEXTURES; [6 ,6]-PHENYL-C61-BUTYRIC ACID METHYL ESTERS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84856370250     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.10.026     Document Type: Article

References (51)

1. M.R. Baklanov, and K.P. Mogilnikov Microelectron. Eng. 64 2002 335
2. S.-K. Kwak, K.-H. Jeong, and S.-W. Rhee J. Electrochem. Soc. 151 2004 F11
3. P. Hoffmann, D. Schmeisser, H.-J. Engelmann, E. Zschech, H. Stegmann, F. Himpsel, and J. Denlinger Mater. Res. Soc. Symp. Proc. 2006 F0
4. K. Zagorodniy, D. Chumakov, C. Taschner, A. Lukowiak, H. Stegmann, D. Schmeisser, H. Geisler, H.-J. Engelmann, H. Hermann, and E. Zschech IEEE Trans. Semicond. Manuf. 21 2008 646
5. A. Gulino, S. Bazzano, G.G. Condorelli, S. Giuffrida, P. Mineo, C. Satriano, E. Scamporrino, G. Ventimiglia, D. Vitalini, and I. Fragalà Chem. Mater. 17 2005 1079
6. X. Zhang, Y. Huang, Y. Wang, Y. Ma, Z. Liu, and Y. Chen Carbon 47 2009 334
7. K. Zagorodniy, H. Hermann, and M. Taut Phys. Rev. B 75 2007 245430
8. D.Q. Li, and B.I. Swanson Langmuir 9 1993 3341
9. K.M. Kadish, and E.S.F. Group Fullerenes first ed 1999 The Electrochemical Society
10. A.K. Chauhan, D.K. Aswal, S.P. Koiry, S.K. Gupta, J.V. Yakhmi, C. Sürgers, D. Guerin, S. Lenfant, and D. Vuillaume Appl. Phys. A 90 2007 581
11. H.L. Cabibil, V. Pham, J. Lozano, H. Celio, R.M. Winter, and J.M. White Langmuir 16 2000 10471
12. N. Satyanarayana, S.K. Sinha, and L. Shen Tribol. Lett. 28 2007 71
13. D.G. Kurth, and T. Bein Langmuir 11 1995 3061
14. B. Todorovic Markovic, V. Jokanovic, S. Jovanovic, D. Kleut, M. Dramicanin, and Z. Markovic Appl. Surf. Sci. 255 2009 7537
15. A.J. Nolte, J.Y. Chung, M.L. Walker, and C.M. Stafford ACS Appl. Mater. Interfaces 1 2009 373
16. K. Zagorodniy, H. Hermann, and M. Taut Phys. Rev. B 75 2007 245430
17. X. Wang, Y.H. Tseng, J.C.C. Chan, and S. Cheng Microporous Mesoporous Mater. 85 2005 241
18. R.R. Sahoo, and A. Patnaik J. Colloid Interface Sci. 268 2003 43
19. E. Halpern, B. Khamaisi, O. Shaya, G. Shalev, I. Levy, and Y. Rosenwaks J. Phys. Chem. C 113 2009 16802
20. M.P. Seah, I.S. Gilmore, and S.J. Spencer J. Electron. Spectrosc. Relat. Phenom. 120 2001 93
21. M.P. Seah, I.S. Gilmore, and S.J. Spencer Surf. Interface Anal. 26 1998 617
22. M. Repoux Surf. Interface Anal. 18 1992 567
23. M.V. Baker, and J.D. Watling Langmuir 13 1997 2027
24. J. Du, and P. Zhang J. Mater. Sci. Technol. 23 2007 571
25. J.F. Moulder, W.F. Stickle, and P.E. Sobol Handbook of X Ray Photoelectron Spectroscopy, Perkin-Elmer 1993 Physical Electronics Division Eden Prairie
26. D.M. Trucchi, C. Scilletta, E. Cappelli, P.G. Merli, S. Zoffoli, G. Mattei, and P. Ascarelli Diam. Relat. Mater. 15 2006 827
27. K. Henkel, Electrical Investigations on Praseodymium Oxide/Aluminum Oxynitride Containing Metal-Insulator-Semiconductor Stacks and on Metal-Ferroelectric-Insulator-Semiconductor Structures Consisting of Poly(vinylidene Fluoride Trifluoroethylene), Ph.D. Thesis, Brandenburg University of Technology, Germany, Shaker-Verlag, 2009.
28. K. Broczkowska, J. Klocek, D. Friedrich, K. Henkel, K. Kolanek, A. Urbanowicz, D. Schemeisser, M. Miller, and E. Zschech Students and Young Scientists Workshop "Photonics and Microsystems", 2010 International 2010 39
29. D. Schmeisser, K. Henkel, K. Müller, and M. Tallarida Adv. Eng. Mater. 11 2009 269
30. D. Schmeisser, M. Tallarida, K. Henkel, K. Müller, D. Mandal, D. Chumakov, and E. Zschech Mater. Sci. Poland 27 2009 141
31. X. Zhang, and A.V. Teplyakov Langmuir 24 2008 810
32. A.P. Dementjev, A. De Graaf, M.C.M. Van de Sanden, K.I. Maslakov, A.V. Naumkin, and A.A. Serov Diamond Relat. Mater. 9 2000 1904
33. M. Kondo, T.E. Mates, D.A. Fischer, F. Wudl, and E.J. Kramer Langmuir 26 2010 17000
34. M. Ramm, M. Ata, K.W. Brzezinka, T. Gross, and W. Unger Thin Solid Films 354 1999 106
35. M.C. Ferrara, L. Mirenghi, A. Mevoli, and L. Tapfer Nanotechnology 19 2008 365706
36. T.I.T. Okpalugo, P. Papakonstantinou, H. Murphy, J. McLaughlin, and N.M.D. Brown Carbon 43 2005 153
37. S. Ek, E.I. Iiskola, L. Niinistö, J. Vaittinen, T.T. Pakkanen, J. Keränen, and A. Auroux Langmuir 19 2003 10601
38. R. Machorro, E.C. Samano, G. Soto, and L. Cota Appl. Surf. Sci. 127-129 1998 564
39. C. Jama, A. Al khawwam, A.-S. Loir, P. Goudmand, O. Dessaux, L. Gengembre, and J. Grimblot Surf. Interface Anal. 31 2001 815
40. R. Machorro, E.C. Samano, G. Soto, and L. Cota Appl. Surf. Sci. 127-129 1998 564
41. J. Fu, V. Tsai, R. Köning, R. Dixson, and T. Vorburger Nanotechnology 10 1999 428
42. N.G. Orji, R.G. Dixson, J. Fu, and T.V. Vorburger Wear 257 2004 1264
43. H. Edwards, R. McGlothlin, and E. U. J. Appl. Phys. 83 1998 3952
44. L.I. Fedina, D.V. Sheglov, S.S. Kosolobov, A.K. Gutakovskii, and A.V. Latyshev Meas. Sci. Technol. 21 2010 054004
45. M. Suzuki, S. Aoyama, T. Futatsuki, A.J. Kelly, T. Osada, A. Nakano, Y. Sakakibara, Y. Suzuki, H. Takami, and T. Takenobu J. Vac. Sci. Technol., A 14 2009 1228
46. M. Mehlhorn, and K. Morgenstern New J. Phys. 11 2009 093015
47. J.D. Cogdell Precis. Eng. 32 2008 34
48. S.M. Sze Physics of Semiconductor Devices second ed. 1981 John Wiley & Sons New York
49. Y. Li, I. Ciofi, L. Carbonell, N. Heylen, J. Van Aelst, M.R. Baklanov, G. Groeseneken, K. Maex, and Z. Tökei J. Appl. Phys. 104 2008 034113
50. M. Uematsu, and E.U. Franck J. Phys. Chem. Ref. Data 9 1980 1291
51. G.S. Haase, E.T. Ogawa, and J.W. McPherson J. Appl. Phys. 98 2005 034503