Influence of absorbed water components on SiOCH low- k reliability

Journal of Applied Physics

Volumn 104, Issue 3, 2008, Pages

  Li, Yunlong ^a   Ciofi, Ivan ^a   Carbonell, Laureen ^a   Heylen, Nancy ^a   Van Aelst, Joke ^a   Baklanov, Mikhal R ^a   Groeseneken, Guido ^a,b   Maex, Karen ^a,b   Tkei, Zsolt ^a  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ABSORPTION SPECTROSCOPY; ACTIVATION ENERGY; CHEMISORPTION; DESORPTION; ELECTRIC BREAKDOWN; LEAKAGE CURRENTS; MATERIALS SCIENCE; PLASMA APPLICATIONS; PLASMAS; SURFACE CHEMISTRY; THERMAL DESORPTION; WATER TREATMENT;

ABSORBED WATER; ANNEAL TEMPERATURES; BOND ENERGIES; FAILURE MECHANISMS; H2 PLASMA; LOW-K DIELECTRICS; PHYSISORBED; PLASMA TREATMENTS; TIME-DEPENDENT-DIELECTRIC-BREAKDOWN;

WATER ABSORPTION;

EID: 49749110099     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2966578     Document Type: Article

References (21)

1. International Technology Roadmap for Semiconductors (ITRS), 2007, available at http://www.itrs.net/Links/2007ITRS/Home2007.htm
2. K. Maex, M. R. Baklanov, D. Shamiryan, F. Iacopi, S. H. Brongersma, and Z. S. Yanovitskaya, J. Appl. Phys. 0021-8979 10.1063/1.1567460 93, 8793 (2003).
3. D. Shamiryan, M. R. Baklanov, S. Vanhaelemeersch, and K. Maex, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1502699 20, 1923 (2002).
4. R. Tsu, J. W. McPherson, and W. R. McKee, Proceedings of the IEEE-IRPS, 2000 (unpublished), pp. 348-353.
5. J. Proost, E. Kondoh, G. Vereecke, M. Heyns, and K. Maex, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.590133 16, 2091 (1998).
6. J. Proost, M. Baknalov, K. Maex, and L. Delaey, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.591189 18, 303 (2000).
7. J. Michelon and R. J. O. M. Hoofman, IEEE Trans. Device Mater. Reliab. 1530-4388 10.1109/TDMR.2006.877365 6, 169 (2006).
8. J. R. Lloyd, T. M. Shaw, and E. G. Liniger, " Effect of moisture on the time dependent dielectric breakdown (TDDB) behavior in an ultra-low- k. (ULK) dielectric" International Integrated Reliability Workshop Final, 2005.
9. Y. -L. Li, I. Ciofi, L. Carbonell, G. Groeseneken, K. Maex, and Zs. Tkei, Proceedings of IEEE International Reliability Physics Symposium, 2007 (unpublished), pp. 405-409.
10. G. Vereecke, E. Kondoh, P. Richardson, K. Maex, and M. M. Heyns, IEEE Trans. Semicond. Manuf. 0894-6507 10.1109/66.857942 13, 315 (2000).
11. H. Li, G. Vereecke, K. Maex, and L. Froyen, J. Electrochem. Soc. 0013-4651 10.1149/1.1372213 148, G344 (2001).
12. I. Ciofi, Zs. Tkei, M. Saglimbeni, and M. Van Hove, Material Research Society Spring Meeting, San Francisco, CA, 2006 (unpublished).
13. I. Ciofi, Zs. Tokei, D. Visalli, and M. Van Hove, Proceedings of IEEE International Interconnect Technology Conference, 2006 (unpublished), pp. 181-183.
14. Zs. Tkei, M. Patz, M. Schmidt, F. Iacopi, S. Demuynck, and K. Maex, Microelectron. Eng. 0167-9317 10.1016/j.mee.2004.07.057 76, 70 (2004).
15. J. W. McPherson and H. C. Mogul, J. Appl. Phys. 0021-8979 10.1063/1.368217 84, 1513 (1998).
16. J. W. McPherson and H. C. Mogul, Appl. Phys. Lett. 0003-6951 10.1063/1.120493 71, 3721 (1997).
17. J. W. McPherson, Proceedings of IEEE International Reliability Physics Symposium, 2007 (unpublished), pp. 209-216.
18. W. Wu, X. Duan, and J. S. Yuan, Proceedings of IEEE International Reliability Physics Symposium, 2003 (unpublished), pp. 282-286.
19. F. Chen, O. Bravo, K. Chanda, P. McLaughlin, T. Sullivan, J. Gill, J. Lloyd, R. Kontra, and J. Aitken, Proceedings of IEEE International Reliability Physics Symposium, 2006 (unpublished), pp. 46-53.
20. N. Suzumura, S. Yamamoto, D. Kodama, K. Makabe, J. Komori, E. Murakami, S. Maegawa, and K. Kubota, Proceedings of IEEE International Reliability Physics Symposium, 2006 (unpublished), pp. 484-489.
21. J. R. Lloyd, E. Liniger, and S. T. Chen, Microelectron. Reliab. 0026-2714 10.1016/j.microrel.2004.07.098 44, 1861 (2004).