Novel carbon-cage-based ultralow-k materials: Modeling and first experiments

IEEE Transactions on Semiconductor Manufacturing

Volumn 21, Issue 4, 2008, Pages 646-660

  Zagorodniy, Kostyantyn ^a   Chumakov, Dmytro ^b   Täschner, Christine ^a   Lukowiak, Anna ^c   Stegmann, Heiko ^d   Schmeißer, Dieter ^e   Geisler, Holm ^b   Engelmann, Hans Juergen ^b   Hermann, Helmut ^a   Zschech, Ehrenfried ^b  

^a IFW DRESDEN   (Germany)

^b IBM MICROELECTRONICS   (United States)

^c WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d Zeiss NTS   (Germany)

^e BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC SPECTROSCOPY; CMOS INTEGRATED CIRCUITS; DIAMONDS; DIELECTRIC MATERIALS; ELECTRIC NETWORK TOPOLOGY; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; FILMS; FORECASTING; FULLERENES; MODEL STRUCTURES; NUMERICAL ANALYSIS; OPTICAL INTERCONNECTS; THICK FILMS; THIN FILMS; TOPOLOGY; X RAY SPECTROSCOPY;

ATOMIC FORCES; BULK MODULUS; CMOS TECHNOLOGY NODES; DIELECTRIC CONSTANTS; FILM FABRICATIONS; K VALUES; LINKER MOLECULES; MATERIAL PARAMETERS; MOLECULAR DESIGNS; MOSAIC STRUCTURES; NETWORK TOPOLOGIES; NEW CLASSES; ON-CHIP INTERCONNECTS; SIMPLE CUBIC;

ABSORPTION SPECTROSCOPY;

EID: 55749113156     PISSN: 08946507     EISSN: None     Source Type: Journal    
DOI: 10.1109/TSM.2008.2005396     Document Type: Article

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