Analysis of the frequency response of carbon nanotube transistors

IEEE Transactions on Nanotechnology

Volumn 5, Issue 5, 2006, Pages 599-604

  Akinwande, Deji ^a,b   Close, Gael F ^a,b   Philip Wong, H S ^a,b  

^a IEEE   (United States)

^b Stanford University   (United States)

Author keywords

Carbon nanotube transistors; Frequency response; RF circuit analysis; RF transistors

Indexed keywords

CARBON NANOTUBE TRANSISTORS; GIGAHERTZ FREQUENCIES; RF CIRCUIT ANALYSIS; RF TRANSISTORS;

BANDWIDTH; CARBON NANOTUBES; FREQUENCY RESPONSE; NANOTECHNOLOGY; NATURAL FREQUENCIES;

TRANSISTORS;

EID: 33749003487     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2006.880451     Document Type: Article

References (17)

1. P. Avouris, J. Appenzeller, R. Martel, and S. Wind, "Carbon nanotube electronics," Proc. IEEE, vol. 91, no. 11, pp. 1772-1784, Nov. 2003.
2. A. Javey, J. Guo, D. B. Farmer, Q. Wang, E. Yenilmez, R. G. Gordon, M. Lundstrom, and H. Dai, "Self-aligned ballistic molecular transistors and electrically parallel nanotube arrays," Nona Lett., vol. 4, pp. 1319-1322, 2004.
3. J. Chen, C. Klinke, A. H. Afzali, K. Chan, and P. Avouris, "Self-aligned carbon nanotube transistors with novel chemical doping," in Proc. IEEE IEDM Tech. Dig., Dec. 2004, pp. 695-698.
4. J. U. Lee, P. P. Gipp, and C. M. Heller, "Carbon nanotube p-n junction diodes," Appt. Phys. Lett., vol. 85, pp. 145-147, Jul. 2004.
5. A. Javey, Q. Wang, W. Kim, and H. Dai, "Advancements in complementary carbon nanotube field-effect transistors," in IEEE IEDM Tech. Dig., Dec. 2003, pp. 31.2.1-31.2.4.
6. D. Singh, K. Jenkins, J. Appenzeller, D. Neumayer, A. Grill, and H.-S. P. Wong, "Frequency response of top-gated carbon nanotube field-effect transistors," IEEE Trans. Nanotechnol, vol. 3, no. 5, pp. 383-387, Sep. 2004.
7. D. Singh, K. Jenkins, and J. Appenzeller, "Direct measurements of frequency response of carbon nanotube field-effect transistors," Elect. Lett., vol. 41, Mar. 2005.
8. J. Appenzeller and D. Frank, "Frequency dependent characterization of transport properties in carbon nanotube transistors," Appl. Phys. Lett., vol. 84, pp. 1771-1773, Mar. 2004.
9. S. Rosenblatt, H. Lin, V. Sazonova, S. Tiwari, and P. L. McEuen, Mixing at 50 GHz using a single-walled carbon nanotube transistor [Online], Available: http://www.lassp.cornell.edu/lassp_data/mceuen/homepage/pub.html 2005
10. X. Huo, M. Zhang, P. C. H. Chan, Q. Liang, and Z. K. Tang, "High frequency s parameters characterization of back-gate carbon nanotube field-effect transistors," in Proc. IEEE IEDMTech. Dig., Dec. 2004, pp. 691-694.
11. S. Li, Z. Yu, S.-F. Yen, W. C. Tang, and P. Burke, "Carbon nanotube transistor operation at 2.6 GHz," Nano Lett., vol. 4, pp. 753-756,2004.
12. Cascade Microtech Application Note, Introduction to bipolar device GHz measurement techniques.
13. D. M. Pozar, Microwave Eng., New York: Wiley, 2004, ch. 4.
14. T. H. Lee, The Design of CMOS Radio-Frequency Integrated Circuits. Cambridge, U.K.: Cambridge Univ. Press, 2003, ch. 3 and 12.
15. A. S. Sedra and K. C. Smith, Microelectronic Circuits. Oxford, U.K.: Oxford Univ. Press, 2003.
16. P. J. Burke, "An RF circuit model for carbon nanotubes," IEEE Trans. Nanotechnol., vol. 2, no. 2, pp. 55-58, Mar. 2003.
17. Cascade Microtech Application Note, Mechanical layout rules for infinity probes.