A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

Semiconductor Science and Technology

Volumn 20, Issue 10, 2005, Pages 1044-1051

  Dueas S ^a   Castan H ^a   Garcia H ^a   Andrés, E San ^b   Toledano Luque, M ^b   Martil I ^b   Gonzalez Diaz G ^b   Kukli, K ^c   Uustare, T ^c   Aarik, J ^c  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^c UNIVERSITY OF TARTU   (Estonia)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; ELECTRIC PROPERTIES; FILM GROWTH; INFRARED SPECTROSCOPY; INTERFACES (MATERIALS); RAPID THERMAL ANNEALING; SEMICONDUCTOR DEVICES; SILICON; SPUTTER DEPOSITION; SPUTTERING; TITANIUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); DISORDER-INDUCED GAP STATE (DIGS) DENSITY; HIGH-PRESSURE REACTIVE SPUTTERED (HPRS); INTERFACIAL STATES;

THIN FILMS;

EID: 25444496696     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/10/011     Document Type: Article

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