Precursor-dependent structural and electrical characteristics of atomic layer deposited films: Case study on titanium oxide

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 1084-1089

  Jõgi, Indrek ^a   Kukli, Kaupo ^a   Aarik, Jaan ^a   Aidla, Aleks ^a   Lu, Jun ^b  

^a UNIVERSITY OF TARTU   (Estonia)

^b UPPSALA UNIVERSITY   (Sweden)

Author keywords

Atomic layer deposition; Dielectric properties; Metal insulator metal structures; Metal insulator semiconductor structures; Titanium dioxide

Indexed keywords

DIELECTRIC PROPERTIES; HYDROGEN PEROXIDE; INTERFACES (MATERIALS); MIM DEVICES; MIS DEVICES; PERMITTIVITY; TITANIUM OXIDES;

ATOMIC LAYER DEPOSITION; CONDUCTION MECHANISMS; PROCESS TEMPERATURES; SUBSTRATE TEMPERATURES;

THIN FILMS;

EID: 33846055461     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.027     Document Type: Article

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