Influence of atomic layer deposition chemistry on high-k dielectrics for charge trapping memories

Solid-State Electronics

Volumn 68, Issue , 2012, Pages 38-47

  Nikolaou, Nikolaos ^a   Dimitrakis, Panagiotis ^a   Normand, Pascal ^a   Ioannou Sougleridis, Vassilios ^a   Giannakopoulos, Konstantinos ^b   Mergia, Konstantina ^c   Kukli, Kaupo ^d,e   Niinistö, Jaakko ^d   Ritala, Mikko ^d   Leskelä, Markku ^d  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

^c INSTITUTE OF NUCLEAR TECHNOLOGY AND RADIATION PROTECTION   (Greece)

^d UNIVERSITY OF HELSINKI   (Finland)

^e UNIVERSITY OF TARTU   (Estonia)

Author keywords

Flash; Hafnium oxide; High k dielectrics; Non volatile memories; Silicon nitride; SONOS; Zirconium oxide

Indexed keywords

ATOMIC LAYER; BLOCKING LAYERS; CAPACITOR STRUCTURES; CHARGE TRAPPING MEMORIES; DEPOSITION TEMPERATURES; FLASH; GRAZING INCIDENCE X-RAY DIFFRACTION; HIGH-K DIELECTRIC; MEMORY PERFORMANCE; METAL PRECURSOR; METHOXYMETHYL; NON-VOLATILE MEMORIES; OXYGEN SOURCES; SONOS; STRUCTURAL CHARACTERISTICS; TETRAKIS;

ATOMIC LAYER DEPOSITION; CHARGE TRAPPING; DURABILITY; HAFNIUM; HAFNIUM OXIDES; OZONE; PLATINUM; SILICON NITRIDE; SILICON OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; ZIRCONIA; ZIRCONIUM; ZIRCONIUM ALLOYS;

SILICON;

EID: 84655167766     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.09.016     Document Type: Article

References (36)

1. C.-Y. Lu, K.-Y. Hsieh, and R. Lu Microelectron Eng 86 2009 283 286
2. A. Fazio MRS Bull 29 2004 814 819
3. K.H. Kuesters, M.F. Beug, U. Schroeder, N. Nagel, U. Bewersdorff, and G. Dallmann Adv Eng Mater 11 2007 241 248
4. Y. Roizin, and V. Gritsenko M.R. Baklanov, M. Green, K. Maex, Dielectric films for advanced microelectronics 2007 John Wiley and Sons, Ltd. New York 251 296
5. H. Bachhofer, H. Reisinger, E. Bertagnolli, and H. von Philipsborn J Appl Phys 89 2001 2791 2800
6. M.L. French, and M.H. White Solid State Electron 37 1994 1913 1923
7. M.H. White, Y.R. Wang, S.J. Wrazien, and Y.S. Zhao Int J High Speed Electron Syst 16 2002 479 501
8. B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi IEEE Electron Device Lett 21 2000 543 545
9. R. Chau, S. Datta, M. Doczy, B. Doyle, J. Kavalieros, and M. Metz IEEE Electron Device Lett 25 2004 408 410
10. V.A. Gritsenko, K.A. Nasyrov, Yu.N. Novikov, A.L. Aseev, S.Y. Yoon, and J.-W. Lee Solid State Electron 47 2003 1651 1656
11. C.-H. Lee, S.-H. Hur, Y.-C. Shin, J.-H. Choi, D.-G. Park, and K. Kim Appl Phys Lett 86 2005 152908
12. P.-H. Tsai, K.-S.C. Liao, D.-W. Yang, Y.-B. Chung, T.-K. Wang, and P.J. Tzeng Appl Phys Lett 93 2008 252902
13. R. van Schaijk, M. Slotboom, M. van Duuren, D. Dormans, N. Akil, and R. Beurze Solid State Electron 49 2005 1849 1856
14. B. Govoreanu, R. Degraeve, M.B. Zahid, L. Nyns, M. Cho, and B. Kaczer Microelectron Eng 86 2009 1807 1811
15. G. Molas, M. Bocquet, J. Buckley, H. Grampeix, M. Gely, and J.P. Colonna Microelectron Eng 85 2008 2393 2399
16. T. Erlbacher, M.P.M. Jank, M. Lemberger, A.J. Bauer, and H. Ryssel Thin Solid Films 516 2008 7727 7731
17. C.-C. Yeh, T.P. Ma, N. Ramaswamy, N. Rocklein, D. Gealy, and T. Graettinger Appl Phys Lett 91 2007 113521
18. D.S. Jeong, and C.S. Hwang J Appl Phys 98 2005 113701
19. Z. Xu, M. Houssa, S. De Gendt, and M. Heyns Appl Phys Lett 80 2002 1975 1977
20. H. Kim, A. Marshall, P. McIntryre, and K. Saraswat Appl Phys Lett 84 2004 2064 2066
21. R.G. Southwick III, J. Reed, C. Buu, R. Butler, G. Bersuker, and W.B. Knowlton IEEE Trans Device Mater Reliab 10 2010 201 207
22. R. Puurunen J Appl Phys 97 2005 121301
23. J. Niinisto, K. Kukli, M. Heikkila, M. Ritala, and M. Leskela Adv Eng Mater 11 2007 223 234
24. L. Niinisto, J. Paivasaari, J. Niinisto, M. Putkonen, and M. Nieminen Phys Status Solidi A 201 2004 1443 1452
25. K. Kukli, J. Aarik, M. Ritala, T. Uustare, T. Sajavaara, and J. Lu J Appl Phys 96 2004 5298 5307
26. D.M. Hausmann, E. Kim, J. Berker, and R.G. Gordon Chem Mater 14 2002 4350 4358
27. S. Rushworth, K. Coward, H. Davies, P. Heys, T. Leese, and L. Kempster Surf Coat Technol 201 2007 9060 9065
28. K. Kukli, M. Ritala, T. Sajavaara, J. Keinonen, and M. Leskela Chem Vap Deposition 8 2002 199 204
29. C.L. Dezelah, J. Niinisto, K. Kukli, F. Munnik, J. Lu, and M. Ritala Chem Vap Deposition 14 2008 358 365
30. S. Duenas, H. Castan, H. Garcia, A. Gomez, L. Bailon, and K. Kukli J Vac Sci Technol B 27 2009 389 393
31. R.G. Southwick III, and W.B. Knowlton IEEE Trans Device Mater Reliab 6 2006 136 145
32. J.K. Schaeffer, L.R.C. Fonseca, S.B. Samavedam, Y. Liang, P.J. Tobin, and B.E. White J Appl Phys 85 2004 1826 1828
33. V. Ioannou-Sougleridis, P. Dimitrakis, V.Em. Vamvakas, P. Normand, C. Bonafos, and S. Schamm Nanotechnology 18 2007 215204
34. J. Robertson J Vac Sci Technol B 18 2000 1785 1791
35. D.S. Golonovic, M.J. van Duuren, N. Akil, A. Arreghini, and F. Driussi Microelectron Eng 86 2009 1999 2004
36. S.-H. Gu, C.-W. Hsu, T. Wang, W.-P. Lu, Y.-H.J. Ku, and C.-Y. Lu IEEE Trans Electron Devices 54 2007 90 97