Numerical simulation of bottom oxide thickness effect on charge retention in SONOS flash memory cells

IEEE Transactions on Electron Devices

Volumn 54, Issue 1, 2007, Pages 90-97

  Gu, Shaw Hung ^a   Hsu, Chih Wei ^a   Wang, Tahui ^a   Lu, Wen Pin ^b   Ku, Yen Hui Joseph ^b   Lu, Chih Yuan ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

Oxide thickness; Positive oxide charge assisted tunneling; Shockley Read Hall (SRH) rate equation; SONOS retention mechanisms

Indexed keywords

COMPUTER SIMULATION; ELECTRIC EXCITATION; ELECTRON TRAPS; ELECTRON TUNNELING; LEAKAGE CURRENTS; MATHEMATICAL MODELS; OXIDES;

CHARGE-ASSISTED TUNNELING; CHARGE-LEAKAGE CURRENT; CHARGE-RETENTION LOSS; CONDUCTION BAND; FRENKEL-POOLE EXCITATION; SHOCKLEY-READ-HALL RATE EQUATION;

FLASH MEMORY;

EID: 33846057298     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.887219     Document Type: Article

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