Analysis of nitride storage non-volatile memories with HfSiOx blocking dielectric and TiN metal gate for low power embedded applications

Microelectronic Engineering

Volumn 86, Issue 10, 2009, Pages 1999-2004

  Golubović, Dušan S ^a   van Duuren, Michiel J ^a   Akil, Nader ^a   Arreghini, Antonio ^b   Driussi, Francesco ^b  

^a NXP TSMC Research Center   (Belgium)

^b UNIVERSITY OF UDINE   (Italy)

Author keywords

Flash memories; High K dielectrics; Nitride storage; Non volatile memories; Scalability; SONOS

Indexed keywords

45NM NODE; EMBEDDED APPLICATION; FIGURES OF MERITS; HAFNIUM SILICATES; HIGH-K DIELECTRICS; LOW POWER; METAL GATE; NITRIDE STORAGE; NON-VOLATILE MEMORIES; SONOS; TIN METAL GATE;

DIELECTRIC MATERIALS; FLASH MEMORY; HAFNIUM; HAFNIUM COMPOUNDS; SCALABILITY; SILICATES; TITANIUM;

TITANIUM NITRIDE;

EID: 67649995505     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.01.028     Document Type: Article

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