Advancements in nanoelectronic SONOS nonvolatile semiconductor memory (NVSM) devices and technology

International Journal of High Speed Electronics and Systems

Volumn 16, Issue 2, 2006, Pages 479-501

  White, Marvin H ^a   Wang, Yu ^a   Wrazien, Stephen J ^a   Zhao, Yijie ^a  

^a Lehigh University   (United States)

Author keywords

CMOS; Devices; Endurance; Erase; Integrated circuit technology; Nonvolatile; NROM; Retention; Semiconductor memory; SONOS; Write

Indexed keywords

DIELECTRIC DEVICES; DIGITAL INTEGRATED CIRCUITS; DURABILITY; EMBEDDED SYSTEMS; MICROCONTROLLERS; NANOTECHNOLOGY; POLYSILICON; SEMICONDUCTOR STORAGE;

DEVICES; ERASING; FLOATING GATE DEVICE; INTEGRATED CIRCUIT TECHNOLOGY; NANOELECTRONICS; NONVOLATILE SEMICONDUCTOR MEMORY (NVSM); RETENTION; SONOS NONVOLATILE SEMICONDUCTOR MEMORY;

SEMICONDUCTOR DEVICES;

EID: 33748464557     PISSN: 01291564     EISSN: None     Source Type: Journal    
DOI: 10.1142/S0129156406003801     Document Type: Conference Paper

References (25)

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