Stacked dual-oxide MOS energy band diagram visual representation program (IRW student paper)

IEEE Transactions on Device and Materials Reliability

Volumn 6, Issue 2, 2006, Pages 136-145

  Southwick III, Richard G ^a,b   Knowlton, William B ^a,b  

^a IEEE   (United States)

^b Boise State University   (United States)

Author keywords

Dual oxide; Energy band; High k; MOS; Reliability

Indexed keywords

BAND GAP; DUAL OXIDE; ELECTRON AFFINITY; ENERGY BAND DIAGRAMS;

BAND STRUCTURE; ENERGY GAP; GATES (TRANSISTOR); PERMITTIVITY; PHASE DIAGRAMS; SILICON COMPOUNDS; SURFACE CHEMISTRY;

MOS DEVICES;

EID: 33748113122     PISSN: 15304388     EISSN: 15304388     Source Type: Journal    
DOI: 10.1109/TDMR.2006.876971     Document Type: Conference Paper

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