A new low voltage fast SONOS memory with high-k dielectric

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1651-1656

  Gritsenko, V A ^a   Nasyrov, K A ^b   Novikov, Yu N ^a   Aseev, A L ^a   Yoon, S Y ^c   Lee, Jo Won ^c   Lee, E H ^c   Kim, C W ^c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF AUTOMATION AND ELECTROMETRY   (Russian Federation)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

EEPROM; FLASH; High k dielectrics; Silicon nitride; SONOS

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIELECTRIC DEVICES; DYNAMIC RANDOM ACCESS STORAGE; PERMITTIVITY; PROM; ZIRCONIA;

VOLTAGE AMPLITUDE;

DATA STORAGE EQUIPMENT;

EID: 0041592493     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00174-6     Document Type: Conference Paper

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