Low voltage and low power embedded 2T-SONOS flash memories improved by using P-type devices and high-K materials

Solid-State Electronics

Volumn 49, Issue 11 SPEC. ISS., 2005, Pages 1849-1856

  Van Schaijk, R ^a   Slotboom, M ^a   Van Duuren, M ^a   Dormans, D ^b   Akil, N ^a   Beurze, R ^b   Neuilly, F ^a   Baks, W ^a   Miranda, A H ^a   Tello, P G ^a  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Flash; HfO2; HfSiON; High K materials; Low power; Non volatile memory; Reliability; SONOS

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIELECTRIC MATERIALS; EMBEDDED SYSTEMS; NONVOLATILE STORAGE; RELIABILITY; SILICA; SILICON; THRESHOLD VOLTAGE; TRANSISTORS;

FLASH; HFO2; HFSION; HIGH-K MATERIALS; LOW POWER; NON-VOLATILE MEMORY; SONOS;

FLASH MEMORY;

EID: 28044439143     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.10.017     Document Type: Conference Paper

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