Evaluation of HfAlO high-k materials for control dielectric applications in non-volatile memories

Microelectronic Engineering

Volumn 85, Issue 12, 2008, Pages 2393-2399

  Molas, G ^a   Bocquet, M ^a   Buckley, J ^a   Grampeix, H ^a   Gely M ^a   Colonna, J P ^a   Martin, F ^a   Brianceau, P ^a   Vidal, V ^a   Bongiorno, C ^b   Lombardo, S ^b   Pananakakis, G ^c   Ghibaudo, G ^c   De Salvo, B ^a   Deleonibus, S ^a  

^a CEA LETI   (France)

^b CNR IMM   (Italy)

^c IMEP LAHC   (France)

Author keywords

Control dielectrics; Hafnium aluminate; HfAlO; High k; Interpoly dielectrics; Non volatile memories; Silicon nanocrystals

Indexed keywords

CONCURRENCY CONTROL; DATA STORAGE EQUIPMENT; DIELECTRIC PROPERTIES; ELECTRIC NETWORK ANALYSIS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HAFNIUM; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURES; OPTICAL WAVEGUIDES; SEMICONDUCTOR STORAGE; SILICON; SILICON COMPOUNDS;

HAFNIUM ALUMINATE; HFALO; HIGH-K; INTERPOLY DIELECTRICS; NON-VOLATILE MEMORIES; SILICON NANOCRYSTALS;

DIELECTRIC MATERIALS;

EID: 56649115871     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.09.008     Document Type: Article

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