SCOPUS 정보 검색 플랫폼

Volumn 338, Issue 1, 2012, Pages 20-29

Growth optimization and characterization of lattice-matched Al 0.82In 0.18N optical confinement layer for edge emitting nitride laser diodes

(18) Kim Chauveau, H a Frayssinet, E a Damilano, B a De Mierry, P a Bodiou, L a Nguyen, L a Vennegues P a Chauveau, J M a,b Cordier, Y a Duboz, J Y a Charash, R c Vajpeyi, A c Lamy, J M c Akhter, M c Maaskant, P P c Corbett, B c Hangleiter, A d Wieck, A e

a CRHEA CNRS (France)

b UNIVERSITÉ CÔTE D'AZUR (France)

c UNIVERSITY COLLEGE CORK (Ireland)

d TECHNICAL UNIVERSITY OF BRAUNSCHWEIG (Germany)

e Lehrstuhl fuer Angewandte Festkoerperphysik (Germany)

Author keywords

A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting indium compounds; B2. Semiconducting ternary compounds; B3. Laser diodes

Indexed keywords

EDGE EMITTING LASER DIODE; ELECTRICALLY INJECTED; GAN SUBSTRATE; GROWTH OPTIMIZATION; HIGH RESOLUTION X RAY DIFFRACTION; IN-SITU MEASUREMENT; LATTICE-MATCHED; MULTILAYER STRUCTURES; OPTICAL CONFINEMENT LAYERS; SEMICONDUCTING TERNARY COMPOUNDS; STRESS EVOLUTION; V-SHAPED DEFECTS;

ALUMINUM; ATOMIC FORCE MICROSCOPY; COMPOSITE FILMS; CRYSTAL ATOMIC STRUCTURE; DIODES; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MULTILAYERS; OPTICAL MULTILAYERS; OPTIMIZATION; ORGANIC CHEMICALS; ORGANOMETALLICS; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84655162282 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2011.10.016 Document Type: Article

Times cited : (11)

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