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Applied Physics Letters

Volumn 96, Issue 13, 2010, Pages

Small valence-band offset of In0.17 Al0.83 N/GaN heterostructure grown by metal-organic vapor phase epitaxy

(6) Akazawa, M a,b Matsuyama, T a Hashizume, T a,b Hiroki, M c Yamahata, S c Shigekawa, N c

a HOKKAIDO UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c NTT CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE-RESOLVED XPS; BAND DISCONTINUITIES; CONDUCTION BAND OFFSET; HETEROSTRUCTURES; LARGE PARTS; LATTICE-MATCHED; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; VALENCE BAND OFFSETS; VALENCE-BAND OFFSET; XPS;

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; PHASE INTERFACES; VALENCE BANDS; VAPORS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 77950479186 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3368689 Document Type: Article

Times cited : (53)

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