Al0.83 In0.17 N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers

Applied Physics Letters

Volumn 94, Issue 19, 2009, Pages

  Castiglia, A ^a   Feltin, E ^a   Cosendey, G ^a   Altoukhov, A ^a   Carlin, J F ^a   Butt R ^a   Grandjean, N ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BLOCKING LAYERS; BLUE LASER DIODES; DEVICE PERFORMANCE; EDGE EMITTING LASERS; LASING EMISSIONS; LATTICE-MATCHED; OPTICAL MODES; PULSED CURRENT INJECTION; ROOM TEMPERATURE;

GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM;

ALUMINUM;

EID: 67049134331     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3138136     Document Type: Article

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