메뉴 건너뛰기




Volumn 38, Issue 1, 2005, Pages 1-37

InN, latest development and a review of the band-gap controversy

Author keywords

Absorption; Alloy; Band gap; Indium nitride; Oxygen; Photoluminescence

Indexed keywords

ARTEFACTS; BAND-GAP; INDIUM NITRIDE; SECONDARY ION MASS SPECTROSCOPY (SIMS);

EID: 20644452446     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.spmi.2005.03.004     Document Type: Review
Times cited : (187)

References (162)
  • 8
    • 0003405620 scopus 로고
    • Current status of the research on III-V mononitride thin films for electronic and optoelectronic applications
    • R. Freer Kluwer Academic Publishers The Netherlands
    • R.F. Davis Current status of the research on III-V mononitride thin films for electronic and optoelectronic applications R. Freer The Physics and Chemistry of Carbides: Nitrides and Borides 1990 Kluwer Academic Publishers The Netherlands 653
    • (1990) The Physics and Chemistry of Carbides: Nitrides and Borides , pp. 653
    • Davis, R.F.1
  • 12
    • 0001778434 scopus 로고
    • Crystal structure, mechanical properties, thermal properties and refractive index of InN
    • Properties of Group III Nitrides, J.H. Edgar Publ. Inspec. London
    • T.L. Tansley Crystal structure, mechanical properties, thermal properties and refractive index of InN J.H. Edgar Properties of Group III Nitrides EMIS Data Reviews 1994 Publ. Inspec. London 35
    • (1994) EMIS Data Reviews , pp. 35
    • Tansley, T.L.1
  • 13
    • 0011291381 scopus 로고
    • Phase diagram of InN
    • Properties of Group III Nitrides, J.H. Edgar Publ. Inspec. London
    • S. Porowski, and I. Grzegory Phase diagram of InN J.H. Edgar Properties of Group III Nitrides EMIS Data Reviews 1994 Publ. Inspec. London 82
    • (1994) EMIS Data Reviews , pp. 82
    • Porowski, S.1    Grzegory, I.2
  • 14
    • 0007481164 scopus 로고
    • Electrical properties of InN, GaInN and AlInN
    • Properties of Group III Nitrides, J.H. Edgar Publ. Inspec. London
    • W.A. Bryden, and T.J. Kistenmacher Electrical properties of InN, GaInN and AlInN J.H. Edgar Properties of Group III Nitrides EMIS Data Reviews 1994 Publ. Inspec. London 117
    • (1994) EMIS Data Reviews , pp. 117
    • Bryden, W.A.1    Kistenmacher, T.J.2
  • 15
    • 0345569058 scopus 로고
    • Band structure of pure InN
    • Properties of Group III Nitrides, J.H. Edgar Publ. Inspec. London
    • W.R.L. Lambrecht, and B. Segall Band structure of pure InN J.H. Edgar Properties of Group III Nitrides EMIS Data Reviews 1994 Publ. Inspec. London 151
    • (1994) EMIS Data Reviews , pp. 151
    • Lambrecht, W.R.L.1    Segall, B.2
  • 16
    • 20644453594 scopus 로고
    • Band structure of InN, GaInN and AlInN
    • Properties of Group III Nitrides, J.H. Edgar Publ. Inspec. London
    • D. Jenkins Band structure of InN, GaInN and AlInN J.H. Edgar Properties of Group III Nitrides EMIS Data Reviews 1994 Publ. Inspec. London 159
    • (1994) EMIS Data Reviews , pp. 159
    • Jenkins, D.1
  • 17
    • 0010354752 scopus 로고
    • Optical functions of InN
    • Properties of Group III Nitrides, J.H. Edgar Publ. Inspec. London
    • J.A. Miragliotta Optical functions of InN J.H. Edgar Properties of Group III Nitrides EMIS Data Reviews 1994 Publ. Inspec. London 195
    • (1994) EMIS Data Reviews , pp. 195
    • Miragliotta, J.A.1
  • 18
    • 0042561618 scopus 로고    scopus 로고
    • Bandedge and optical functions of InN
    • J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Publ. INSPEC London
    • M. Leroux, and B. Gil Bandedge and optical functions of InN J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Gallium Nitride and Related Semiconductors 1999 Publ. INSPEC London 117
    • (1999) Gallium Nitride and Related Semiconductors , pp. 117
    • Leroux, M.1    Gil, B.2
  • 19
    • 20644468035 scopus 로고    scopus 로고
    • Raman and IR studies of InN
    • J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Publ. INSPEC London
    • C. Wetzel, and I. Akasaki Raman and IR studies of InN J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Gallium Nitride and Related Semiconductors 1999 Publ. INSPEC London 121
    • (1999) Gallium Nitride and Related Semiconductors , pp. 121
    • Wetzel, C.1    Akasaki, I.2
  • 20
    • 45749155829 scopus 로고    scopus 로고
    • Basic physical properties of InN
    • J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Publ. INSPEC London
    • T.L. Tansley, and E.M. Goldys Basic physical properties of InN J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Gallium Nitride and Related Semiconductors 1999 Publ. INSPEC London 123
    • (1999) Gallium Nitride and Related Semiconductors , pp. 123
    • Tansley, T.L.1    Goldys, E.M.2
  • 21
    • 0010355029 scopus 로고    scopus 로고
    • Electrical properties of InN
    • J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Publ. INSPEC London
    • T.L. Tansley, and E.M. Goldys Electrical properties of InN J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Gallium Nitride and Related Semiconductors 1999 Publ. INSPEC London 129
    • (1999) Gallium Nitride and Related Semiconductors , pp. 129
    • Tansley, T.L.1    Goldys, E.M.2
  • 22
    • 84948985687 scopus 로고    scopus 로고
    • High pressure solution growth of GaN and related compounds
    • J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Publ. INSPEC London
    • I. Grzegory, and S. Porowski High pressure solution growth of GaN and related compounds J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Gallium Nitride and Related Semiconductors 1999 Publ. INSPEC London 359
    • (1999) Gallium Nitride and Related Semiconductors , pp. 359
    • Grzegory, I.1    Porowski, S.2
  • 23
    • 20644447859 scopus 로고    scopus 로고
    • Dry etching of GaN and related compounds
    • J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Publ. INSPEC London
    • A.T. Ping, and I. Adesida Dry etching of GaN and related compounds J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Gallium Nitride and Related Semiconductors 1999 Publ. INSPEC London 475
    • (1999) Gallium Nitride and Related Semiconductors , pp. 475
    • Ping, A.T.1    Adesida, I.2
  • 26
    • 20644470786 scopus 로고    scopus 로고
    • http://www.blu-ray.com
  • 28
    • 20644456335 scopus 로고    scopus 로고
    • Nitronex is issued GaN-Si patent, for 120 W GaN device Compound Semiconductors, October 2003, 13
    • Nitronex is issued GaN-Si patent, for 120 W GaN device Compound Semiconductors, October 2003, 13
  • 47
    • 0042561618 scopus 로고    scopus 로고
    • UV, Blue and Green InGaN quantum well structure LEDs
    • J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Publ. INSPEC London
    • S. Nakamura UV, Blue and Green InGaN quantum well structure LEDs J.H. Edgar S. Strite I. Akasaki H. Amano C. Wetzel Gallium Nitride and Related Semiconductors 1999 Publ. INSPEC London 533
    • (1999) Gallium Nitride and Related Semiconductors , pp. 533
    • Nakamura, S.1
  • 95
    • 20644436307 scopus 로고    scopus 로고
    • Private communication with M. Kuball, H.H. Wills Physics Laboratory, University of Bristol
    • Private communication with M. Kuball, H.H. Wills Physics Laboratory, University of Bristol
  • 103
    • 20644459082 scopus 로고    scopus 로고
    • Private communication with C. P. Foley
    • Private communication with C. P. Foley
  • 113
    • 28044465442 scopus 로고    scopus 로고
    • High energy Urbach characteristic observed for gallium nitride amorphous surface oxide
    • submitted for publication
    • P.P.-T. Chen, K.S.A. Butcher, E.M. Goldys, T.L. Tansley, K.E. Prince, High energy Urbach characteristic observed for gallium nitride amorphous surface oxide, Thin Solid Films (submitted for publication)
    • Thin Solid Films
    • Chen, P.P.-T.1    Butcher, K.S.A.2    Goldys, E.M.3    Tansley, T.L.4    Prince, K.E.5
  • 130
    • 20644460408 scopus 로고    scopus 로고
    • Unpublished data presented at the Fremantle, Australia, 16-20th November
    • K.S.A. Butcher, Unpublished data presented at the First International InN Workshop, Fremantle, Australia, 16-20th November 2003
    • (2003) First International InN Workshop
    • Butcher, K.S.A.1
  • 132
    • 20644452943 scopus 로고    scopus 로고
    • Private communication with W.J. Schaff of Cornell University
    • Private communication with W.J. Schaff of Cornell University
  • 134
    • 0017728665 scopus 로고
    • Review of radiation-induced defects in III-V compounds
    • D.V. Lang Review of radiation-induced defects in III-V compounds Inst. Phys. Conf. Ser. 31 1977 70 (Chapter 1)
    • (1977) Inst. Phys. Conf. Ser. , vol.31 , pp. 70
    • Lang, D.V.1
  • 151
    • 0009379863 scopus 로고
    • Chp. 5 Paper presented at the Silicon Carbide and Related Materials Conference Kyoto Japan
    • T. Inushima, T. Yaguchi, A. Nagase, A. Iso, T. Shiraishi, Inst. Phys. Conf. Ser. 142, Chp. 5, 971, Paper presented at the Silicon Carbide and Related Materials Conference, 1995, Kyoto Japan
    • (1995) Inst. Phys. Conf. Ser. , vol.142 , pp. 971
    • Inushima, T.1    Yaguchi, T.2    Nagase, A.3    Iso, A.4    Shiraishi, T.5
  • 161
    • 3242821791 scopus 로고    scopus 로고
    • The Role of Hydrogen in GaN and Related Compounds in Optoelectronic Properties of Semiconductors and Superlattices
    • S.J. Pearton Gordon and Breach Science Publishers Amsterdam
    • S.J. Pearton The Role of Hydrogen in GaN and Related Compounds in Optoelectronic Properties of Semiconductors and Superlattices S.J. Pearton GaN and Related Materials vol. 2 1997 Gordon and Breach Science Publishers Amsterdam 333
    • (1997) GaN and Related Materials , vol.2 , pp. 333
    • Pearton, S.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.