A study of Indium incorporation efficiency in InGaN grown by MOVPE

Journal of Crystal Growth

Volumn 265, Issue 3-4, 2004, Pages 434-439

  Bosi, Matteo ^a   Fornari, Roberto ^a,b  

^a CNR   (Italy)

^b LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

A1. Low dimensional structures; A3. Organometallic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

GROWTH KINETICS; HETEROJUNCTIONS; HYDROGEN; INDIUM; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; ORGANOMETALLICS; PARTIAL PRESSURE; SAPPHIRE; SEMICONDUCTOR GROWTH;

LOW DIMENSIONAL STRUCTURES; ORGANOMETALLIC VAPOR PHASE EPITAXY; SEMICONDUCTING III-V MATERIALS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 1942505261     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.02.103     Document Type: Article

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