Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire

Journal of Crystal Growth

Volumn 310, Issue 10, 2008, Pages 2432-2438

  Brunner, F ^a   Knauer, A ^a   Schenk, T ^b   Weyers, M ^a   Zettler, J T ^b  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^b LayTec GmbH   (Germany)

Author keywords

A1. In situ characterization; A3. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

CHEMICAL ANALYSIS; GROWTH KINETICS; LATTICE CONSTANTS; OPTIMIZATION; SILICON WAFERS;

CONCAVE WAFER; VERTICAL TEMPERATURE GRADIENTS;

NITRIDES;

EID: 42249109534     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.01.024     Document Type: Article

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