Single electron device with asymmetric tunnel barriers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1126-1131

  Matsumoto, Yoshinari ^a   Hanajiri, Tatsuro ^a   Toyabe, Tohru ^a   Sugano, Takuo ^a,b  

^a TOYO UNIVERSITY   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

Author keywords

Asymmetric tunnel barrier (ATB); Fowler Nordheim tunneling; Heterostructure; Single electron device; Symmetric tunnel barrier (STB); Unilateral tunneling current

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; ELECTRON TUNNELING; FABRICATION; HETEROJUNCTIONS; NANOTECHNOLOGY; TUNNEL JUNCTIONS;

ASYMMETRIC TUNNEL BARRIERS; FOWLER-NORDHEIM TUNNELING; SINGLE ELECTRON DEVICES; SYMMETRIC TUNNEL BARRIERS; UNILATERAL TUNNELING CURRENT;

ELECTRON DEVICES;

EID: 0030079666     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1126     Document Type: Article

References (8)

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5. Y. Amemiya and M. Akazawa: Oyo Buturi 64 (1995) 765 [in Japanese].
6. Y. Matsumoto, T. Hanajiri, T. Toyabe and T. Sugano: Japan Patent Application 595063558 submitted on March 27, 1995.
7. H. Fukui, M. Fujishima and K. Hoh: Ext. Abst. 1994 Int. Conf. Solid State Devices and Materials (Business Center for Academic Societies Japan, Tokyo, 1994) p. 331.
8. J. R. Tucker: J. Appl. Phys. 72 (1992) 4399.