Photoluminescence of Si3N4 films implanted with Ge+ and Ar+ ions

Semiconductors

Volumn 33, Issue 5, 1999, Pages 523-528

  Tyschenko, I E ^a   Volodin, V A ^a   Rebohle, L ^b   Voelskov, M ^b   Skorupa, V ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Russian Federation)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033132519     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1187721     Document Type: Article

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