Simple method for the fabrication of a high dielectric constant metal-oxide-semiconductor capacitor embedded with Pt nanoparticles

Applied Physics Letters

Volumn 88, Issue 7, 2006, Pages

  Sargentis, Ch ^a   Giannakopoulos, K ^b   Travlos, A ^b   Boukos, N ^b   Tsamakis, D ^a  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON-BEAM (E-BEAM) EVAPORATION; HIGH- K DIELECTRICS; HIGH-FREQUENCY CAPACITANCE-VOLTAGE (C-V) MEASUREMENTS; NANOPARTICLES;

CAPACITANCE; DEPOSITION; DIELECTRIC MATERIALS; ELECTRON BEAMS; NANOSTRUCTURED MATERIALS; PERMITTIVITY; PLATINUM; THIN FILMS;

MOS CAPACITORS;

EID: 32944463911     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2174099     Document Type: Article

References (9)

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