Hole-versus electron-based operations in SiGe nanocrystal nonvolatile memories

Applied Physics Letters

Volumn 90, Issue 22, 2007, Pages

  De Sousa, J S ^a   Freire, V N ^a   Leburton, J P ^b  

^a FEDERAL UNIVERSITY OF CEARÁ   (Brazil)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; NANOCRYSTALS; SILICON COMPOUNDS; VALENCE BANDS;

ELECTRON BASED OPERATIONS; HOLES STORAGE; PROGRAMMING PERFORMANCES;

NONVOLATILE STORAGE;

EID: 34249903853     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2741598     Document Type: Article

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