Effect of ion energy and dose on the positioning of 2D-arrays of Si nanocrystals ion beam synthesized in thin SiO2 layers

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 17, Issue 1-4, 2003, Pages 513-515

  Carrada, M ^a   Bonafos, C ^a   Ben Assayag, G ^a   Chassaing, D ^a   Normand, P ^b   Tsoukalas, D ^b   Soncini, V ^c   Claverie, A ^a  

^a CEMES CNRS   (France)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^c STMICROELECTRONICS   (Italy)

Author keywords

Ion implantation; Nanoparticles; Non volatile memories; TEM

Indexed keywords

ION IMPLANTATION; MOS DEVICES; NANOSTRUCTURED MATERIALS; SILICA; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

NON VOLATILE MEMORIES;

SEMICONDUCTING SILICON;

EID: 0037393337     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(02)00855-X     Document Type: Conference Paper

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4. Normand P.et al. Electrochem. Solid State Lett. 88:1998;1.