Characterization and modeling of fast traps in thermal agglomerating germanium nanocrystal metal-oxide-semiconductor capacitor

Journal of Applied Physics

Volumn 104, Issue 1, 2008, Pages

  Chiang, K H ^a   Lu, S W ^a   Peng, Y H ^a   Kuan, C H ^a   Tsai, C S ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b University of California at Irvine   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BIOMECHANICS; CAPACITANCE; CAPACITORS; CHEMICAL SENSORS; CIRCUIT THEORY; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC EQUIPMENT; ENERGY STORAGE; GERMANIUM; HYSTERESIS; METALS; MOS CAPACITORS; NANOCRYSTALLINE ALLOYS; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTECHNOLOGY; PNEUMATIC CONTROL EQUIPMENT; RESPIRATORY MECHANICS; SEMICONDUCTOR MATERIALS; SILICON; VALENCE BANDS;

AMERICAN INSTITUTE OF PHYSICS (AIP); BAND GAPS; CAPACITANCE-VOLTAGE (C-V); CAPACITOR STRUCTURES; CHARACTERISTIC TIME; CHARGE STORAGE CHARACTERISTICS; FREQUENCY DEPENDENT; GATE BIASES; HYSTERESIS WINDOWS; INDEPENDENCE (PERSONALITY); INTERFACE TRAPPING; METAL-OXIDE SEMICONDUCTOR (MOS); MODEL BASED (OPC); NANO CRYSTALS; ORDER-OF MAGNITUDES; POST METALLIZATION ANNEAL (PMA); TRAP DENSITIES; UNIFOR M DISTRIBUTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 47749115713     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2953194     Document Type: Article

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