Mechanism of surface proton transfer doping in pentacene based organic thin-film transistors

Physica Status Solidi (A) Applications and Materials Science

Volumn 209, Issue 1, 2012, Pages 181-192

  Ausserlechner, Simon J ^a   Gruber, Manfred ^b   Hetzel, Reinhold ^a   Flesch, Heinz Georg ^a   Ladinig, Lukas ^a   Hauser, Lucas ^c   Haase, Anja ^d   Buchner, Michael ^b   Resel, Roland ^a   Schürrer, Ferdinand ^b   Stadlober, Barbara ^d   Trimmel, Gregor ^c   Zojer, Karin ^b   Zojer, Egbert ^a  

^a GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^b GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^c GRAZ UNIVERSITY OF TECHNOLOGY   (Austria)

^d JOANNEUM RESEARCH   (Austria)

Author keywords

device modelling; organic semiconductors; pentacene; proton transfer doping; space charge layers; thin film transistors

Indexed keywords

ACIDIC GROUPS; ACIDIC PROTON; ACTIVE LAYER; ACTIVE MATERIAL; CARBON ATOMS; CHEMICAL FUNCTIONALITY; DEVICE CHARACTERISTICS; DEVICE CHARACTERIZATION; DEVICE MODELLING; DRIFT DIFFUSION; ELECTROPHILIC ATTACK; GATE OXIDE; INTERFACIAL LAYER; INVERTER STRUCTURES; ORGANIC SEMICONDUCTOR; ORGANIC THIN FILM TRANSISTORS; PENTACENES; PHYSICAL MECHANISM; SEMICONDUCTOR-DIELECTRIC INTERFACE; SPACE CHARGE LAYERS; SPACE CHARGES; TIPS-PENTACENE; X RAY REFLECTIVITY;

ATOMIC FORCE MICROSCOPY; CHEMICAL MODIFICATION; CONTACT ANGLE; DIELECTRIC MATERIALS; EQUIPMENT; HYDROCHLORIC ACID; PROTON TRANSFER; QUANTUM CHEMISTRY; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS; TRANSISTORS; VANADIUM;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 84055218337     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201127595     Document Type: Article

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