Proton migration mechanism for the instability of organic field-effect transistors

Applied Physics Letters

Volumn 95, Issue 25, 2009, Pages

  Sharma, A ^a   Mathijssen, S G J ^a,b   Kemerink, M ^a   De Leeuw, D M ^b   Bobbert, P A ^a  

^a EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION LAYERS; GATE BIAS; GATE BIAS VOLTAGE; P-TYPE; PROTON MIGRATION; ROLE OF WATER; SILICON DIOXIDE;

DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GATES (TRANSISTOR); PROTONS; STABILITY;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 73449109891     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3275807     Document Type: Article

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