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Volumn , Issue , 2004, Pages 381-384

Process control of threshold voltage in organic FETs

Author keywords

[No Author keywords available]

Indexed keywords

ORGANIC FET; PARASITIC BULK CONDUCTIVITY; POLYMER DIELECTRICS; THRESHOLD VOLTAGE CONTROL; CIRCUIT DESIGNS; CIRCUIT FUNCTIONALITY; CIRCUIT YIELD; OXYGEN PLASMAS; PENTACENES; POLYMER GATE DIELECTRICS; PROCESS LEVELS; UV-OZONE TREATMENT;

EID: 21644441820     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (19)

References (11)
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  • 3
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    • (1998) Synth. Met. , vol.92 , pp. 47-52
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  • 4
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    • Stacked pentacene layer organic thin-film transistors with improved characteristics
    • Dec.
    • Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, "Stacked pentacene layer organic thin-film transistors with improved characteristics," IEEE Elecron Device Lett., vol. 18, no. 12, pp. 606-608, Dec. 1997.
    • (1997) IEEE Elecron Device Lett. , vol.18 , Issue.12 , pp. 606-608
    • Lin, Y.-Y.1    Gundlach, D.J.2    Nelson, S.F.3    Jackson, T.N.4
  • 5
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    • Lee, M.W.1    Song, C.K.2
  • 6
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    • Oct.
    • T. Yasuda, K. Fujita, H. Nakashima, and T. Tsutsui, "Organic field-effect transistors with gate dielectric films of poly-p-xylylene derivatives prepared by chemical vapor deposition," Japan. J. Appl. Phys. Part 1, vol. 42, no. 10, pp. 6614-6618, Oct. 2003.
    • (2003) Japan. J. Appl. Phys. Part 1 , vol.42 , Issue.10 , pp. 6614-6618
    • Yasuda, T.1    Fujita, K.2    Nakashima, H.3    Tsutsui, T.4
  • 7
    • 36549097865 scopus 로고
    • The oligothiophene-based field-effect transistor: How it works and how to improve it
    • Jan.
    • G. Horowitz, X. Peng, D. Fichou, and F. Garnier, "The oligothiophene-based field-effect transistor: How it works and how to improve it," J. Appl. Phy., vol. 67, pp. 528-532, Jan. 1990.
    • (1990) J. Appl. Phy. , vol.67 , pp. 528-532
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    • P. V. Necliudov, M. S. Shur, D. J. Gundlach, and T. N. Jackson, "Modeling of organic thin film transistors of different designs," J. Appl. Phys., vol. 88, pp. 6594-6597, Dec. 2000.
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  • 9
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.