Influence of grain sizes on the mobility of organic thin-film transistors

Applied Physics Letters

Volumn 86, Issue 26, 2005, Pages 1-3

  Di Carlo, A ^a   Piacenza, F ^a   Bolognesi, A ^b   Stadlober, B ^c   Maresch, H ^c  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b RAPTECH Srl   (Italy)

^c JOANNEUM RESEARCH   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; FERMI LEVEL; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; SEMICONDUCTING ORGANIC COMPOUNDS; THIN FILMS;

FIELD-EFFECT-EXTRACTED MOBILITY; MACROSCOPIC MODELS; ORGANIC THIN FILM TRANSISTORS; SUBSTRATE TEMPERATURE;

THIN FILM TRANSISTORS;

EID: 22144499590     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1954901     Document Type: Article

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