Combined scheme of UV/ozone and HMDS treatment on a gate insulator for performance improvement of a low-temperature-processed bottom-contact OTFT

Semiconductor Science and Technology

Volumn 26, Issue 4, 2011, Pages

  Fan, Ching Lin ^a   Lin, Yu Zuo ^a   Huang, Cheng Han ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM-CONTACT; FIELD-EFFECT MOBILITIES; GATE INSULATOR; HEXAMETHYLDISILAZANE; LOW TEMPERATURES; ON-CURRENTS; ORGANIC THIN FILM TRANSISTORS; PENTACENES; PERFORMANCE IMPROVEMENTS; SURFACE ENERGIES; THREE ORDERS OF MAGNITUDE; TRAP STATE DENSITY; UV/OZONE;

SEMICONDUCTING ORGANIC COMPOUNDS; SURFACE CHEMISTRY;

THIN FILM TRANSISTORS;

EID: 79952289206     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/26/4/045006     Document Type: Article

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