Contact resistance and threshold voltage extraction in n -channel organic thin film transistors on plastic substrates

Journal of Applied Physics

Volumn 105, Issue 8, 2009, Pages

  Boudinet, Damien ^a   Le Blevennec, Gilles ^a   Serbutoviez, Christophe ^a   Verilhac, Jean Marie ^a   Yan, He ^b   Horowitz, Gilles ^c  

^a CEA GRENOBLE   (France)

^b POLYERA CORPORATION   (United States)

^c UNIVERSITÉ PARIS DIDEROT   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL MOBILITIES; CRITICAL ANALYSIS; GATE VOLTAGES; GOLD SOURCES; LINEAR REGIMES; N CHANNELS; ORGANIC THIN FILM TRANSISTORS; P-CHANNEL DEVICES; PLASTIC SUBSTRATES; POLYETHYLENE NAPHTHALATE; SEMICONDUCTOR FILMS; THRESHOLD VOLTAGE EXTRACTIONS; TRANSFER CHARACTERISTICS; TRANSFER LINES;

CONTACT RESISTANCE; ELECTRON INJECTION; FIELD EFFECT TRANSISTORS; SELF ASSEMBLED MONOLAYERS; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 65449131547     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3110021     Document Type: Article

References (41)

1. J. Zaumseil and H. Sirringhaus, Chem. Rev. (Washington, D.C.) 0009-2665 10.1021/cr0501543 107, 1296 (2007).
2. A. Facchetti, Mater. Today 1369-7021 10.1016/S1369-7021(07)70017-2 10, 28 (2007).
3. G. Horowitz, J. Mater. Res. 0884-2914 10.1557/JMR.2004.0266 19, 1946 (2004).
4. B. A. Jones, M. J. Ahrens, M. H. Yoon, A. Facchetti, T. J. Marks, and M. R. Wasielewski, Angew. Chem., Int. Ed. 1433-7851 10.1002/anie.200461324 43, 6363 (2004).
5. P. R. L. Malenfant, C. D. Dimitrakopoulos, J. D. Gelorme, L. L. Kosbar, T. O. Graham, A. Curioni, and W. Andreoni, Appl. Phys. Lett. 0003-6951 10.1063/1.1467706 80, 2517 (2002).
6. J. H. Oh, S. Liu, Z. Bao, R. Schmidt, and F. Würthner, Appl. Phys. Lett. 0003-6951 10.1063/1.2803073 91, 212107 (2007).
7. Y. Hosoi, D. Tsunamio, H. Ishii, and Y. Furukawa, Chem. Phys. Lett. 0009-2614 10.1016/j.cplett.2006.12.106 436, 139 (2007).
8. H. Z. Chen, M. M. Ling, X. Mo, M. M. Shi, M. Wang, and Z. Bao, Chem. Mater. 0897-4756 10.1021/cm062352w 19, 816 (2007).
9. M. M. Ling, P. Erk, M. Gomes, M. Koenemann, J. Locklin, and Z. Bao, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200601705 19, 1123 (2007).
10. Z. Wang, C. Kim, A. Facchetti, and T. J. Marks, J. Am. Chem. Soc. 0002-7863 129, 13362 (2007). 10.1021/ja073306f
11. T. B. Singh, S. Erten, S. Günes, C. Zafer, G. Turkmen, B. Kuban, Y. Teoman, N. S. Sariciftci, and S. Icli, Org. Electron. 1566-1199 7, 480 (2006). 10.1016/j.orgel.2006.06.010
12. B. A. Jones, A. FAcchetti, M. R. Wasielwski, and T. J. Marks, J. Am. Chem. Soc. 0002-7863 10.1021/ja075242e 129, 15259 (2007).
13. B. Yoo, B. A. Jones, D. Basu, D. Fine, T. Jung, S. Mohapatra, A. Facchetti, K. Dimmler, M. R. Wasielwski, T. J. Marks, and A. Dodabalapur, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200700064 19, 4028 (2007).
14. H. Yan, Y. Zheng, R. Blache, C. Newman, S. F. Lu, J. Woerle, and A. Facchetti, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma.200800629 20, 3393 (2008).
15. B. Yoo, A. Madgavkar, B. A. Jones, S. Nadkarni, A. Facchetti, K. Dimmler, M. R. Wasielewski, T. J. Marks, and A. Dodabalapur, IEEE Electron Device Lett. 0741-3106 10.1109/LED.2006.881019 27, 737 (2006).
16. B. Yoo, T. Jung, D. Basu, A. Dodabalapur, B. A. Jones, A. Facchetti, M. R. Wasielewski, and T. J. Marks, Appl. Phys. Lett. 0003-6951 10.1063/1.2177627 88, 082104 (2006).
17. D. J. Gundlach, K. P. Pernstich, G. Wilckens, M. Gruter, S. Haas, and B. Batlogg, J. Appl. Phys. 0021-8979 10.1063/1.2043256 98, 064502 (2005).
18. M. M. Ling, Z. Bao, P. Erk, M. Koenemann, and M. Gomez, Appl. Phys. Lett. 0003-6951 10.1063/1.2695873 90, 093508 (2007).
19. G. Horowitz, R. Hajlaoui, H. Bouchriha, R. Bourguiga, and M. Hajlaoui, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/(SICI)1521-4095(199808)10: 12<923::AID-ADMA923>3.0.CO;2-W 10, 923 (1998).
20. R. Schroeder, L. A. Majewski, and M. Grell, Appl. Phys. Lett. 0003-6951 10.1063/1.1618946 83, 3201 (2003).
21. E. J. Meijer, C. Tanase, P. W. M. Blom, E. van Veenendaal, B. -H. Huisman, D. M. De Leeuw, and T. M. Klapwijk, Appl. Phys. Lett. 0003-6951 10.1063/1.1479210 80, 3838 (2002).
22. A. Ortiz-Conde, F. J. Garcia Sanchez, J. J. Liou, A. Cerdeira, M. Estrada, and Y. Yue, Microelectron. Reliab. 0026-2714 10.1016/S0026-2714(02) 00027-6 42, 583 (2002).
23. K. Terada, K. Nishiyama, and K. Hatanaka, Solid-State Electron. 0038-1101 10.1016/S0038-1101(00)00187-8 45, 35 (2001).
24. J. J. Liou, A. Ortiz-Conde, and F. J. García-Sánchez, Proceedings of Electron Devices Meeting, IEEE, Hong Kong, p. 31 (1997).
25. A. Ortiz-Conde, F. J. García-Sánchez, and J. J. Liou, Acta Cient. Venez. 0001-5504 51, 176 (2000).
26. M. Tsuno, M. Suga, M. Tanaka, K. Shibahara, M. Miura-Mattauch, and M. Hirose, IEEE Trans. Electron Devices 0018-9383 10.1109/16.772487 46, 1429 (1999).
27. H. S. Wong, M. H. White, T. J. Krutsick, and R. V. Booth, Solid-State Electron. 0038-1101 10.1016/0038-1101(87)90132-8 30, 953 (1987).
28. S. Jain, IEE Proc.: Circuits Devices Syst. 135, 162 (1988).
29. G. Ghibaudo, Electron. Lett. 0013-5194 10.1049/el:19880369 24, 543 (1988).
30. F. Corsi, C. Marzocca, and G. V. Portacci, Electron. Lett. 0013-5194 10.1049/el:19930910 29, 1358 (1993).
31. K. Aoyama, in Simulation of Semiconductor Devices and Processes, edited by, H. Ryssel, and, P. Pichler, Springer, Vienna, Vol. 6, p. 118 (1995).
32. J. He, X. Zhang, and Y. Y. Wang, IEEE Trans. Electron Devices 0018-9383 49, 331 (2002). 10.1109/16.981227
33. F. J. García-Sánchez, A. Ortiz-Conde, G. D. Mercato, J. A. Salcedo, J. J. Liou, and Y. Yue, Solid-State Electron. 44, 673 (2000). 10.1016/S0038-1101(99)00254-3
34. P. Marmont, N. Battaglini, P. Lang, G. Horowitz, J. Hwang, A. Kahn, C. Amato, and P. Calas, Org. Electron. 1566-1199 9, 419 (2008). 10.1016/j.orgel.2008.01.004
35. M. E. Abdelsalam, P. N. Bartlett, J. J. Baumberg, S. Cintra, T. A. Kelf, and A. E. Russel, Electrochem. Commun. 1388-2481 10.1016/j.elecom.2005.04.028 7, 740 (2005).
36. M. Mottaghi and G. Horowitz, Org. Electron. 1566-1199 10.1016/j.orgel.2006.07.011 7, 528 (2006).
37. H. Ishii, K. Sugiyama, E. Ito, and K. Seki, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/(SICI)1521-4095(199906)11:8<605::AID-ADMA605>3.0.CO;2-Q 11, 605 (1999).
38. I. H. Campbell, S. Rubin, T. A. Zawodzinski, J. D. Kress, R. L. Martin, D. L. Smith, N. N. Barashkov, and J. P. Ferraris, Phys. Rev. B 0163-1829 54, R14321 (1996). 10.1103/PhysRevB.54.R14321
39. C. Bock, D. V. Pham, U. Kunze, D. Kafer, G. Witte, and A. Terfort, Appl. Phys. Lett. 0003-6951 10.1063/1.2767235 91, 052110 (2007).
40. G. Heimel, L. Romaner, J. L. Bredas, and E. Zojer, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.96.196806 96, 196806 (2006).
41. G. Heimel, L. Romaner, E. Zojer, and J. L. Bredas, Nano Lett. 1530-6984 10.1021/nl0629106 7, 932 (2007).