Subthreshold characteristics of field effect transistors based on poly(3-dodecylthiophene) and an organic insulator

Journal of Applied Physics

Volumn 92, Issue 1, 2002, Pages 330-337

  Scheinert, S ^a   Paasch, G ^b   Schrodner M ^c   Roth, H K ^c   Sensfuss S ^c   Doll, Th ^a  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b IFW DRESDEN   (Germany)

^c TITK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK PROPERTIES; BULK TRAPS; CHANNEL LENGTH; DRAIN VOLTAGE; FILM FORMATIONS; GATE INSULATOR; GATE VOLTAGES; INTERFACE TRAPS; LINEAR REGION; LONG CHANNEL DEVICES; MATERIAL PARAMETER; ORGANIC DEVICES; ORGANIC INSULATORS; ORGANIC SUBSTRATE; ORGANIC TRANSISTOR; OUTPUT CHARACTERISTICS; POLY(3-DODECYLTHIOPHENE); POLY(3-OCTYLTHIOPHENE)-(P3OT); POLY(4-VINYLPHENOL); REGIO-REGULAR; SATURATION BEHAVIOR; SATURATION CURRENT; SIMILAR MATERIAL; SOLUTION-PROCESSED; SUB-THRESHOLD CURRENT; SUBTHRESHOLD CHARACTERISTICS; SUBTHRESHOLD SLOPE; SUPPLY VOLTAGES; SYSTEMATIC VARIATION; TRANSFER CHARACTERISTICS; TRAP STATE;

FIELD EFFECT TRANSISTORS; HOLE MOBILITY; INTERFACE STATES; INTERFACES (MATERIALS); SILICA; SUBSTRATES; TRANSISTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 0036639914     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486253     Document Type: Article

References (32)

1. A. Dodabalapur, Z. Bao, A. Makhija, J. G. Laquindanum, V. R. Raju, Y. Feng, H. E. Katz, J. Rogers, Appl. Phys. Lett. 73, 142 (1998). apl APPLAB 0003-6951
2. Th. N. Jackson, Y.-Y. Lin, D. J. Gundlach, H. Klauk, IEEE J. Sel. Top. Quantum Electron. 4, 101 (1998). isq IJSQEN 1077-260X
3. E. Y. Ma, S. D. Theiss, M. H. Lu, C. C. Wu, J. C. Sturm, S. Wagner, Tech. Dig. Int. Electron Devices Meet. 1997, 535. tcd TDIMD5 0163-1918
4. D. M. de Leeuw, P. W. M. Blom, C. M. Hart, C. M. J. Mutsaers, C. J. Dury, M. Matters, H. Termeer, Tech. Dig. Int. Electron Devices Meet. 1997, 331. tcd TDIMD5 0163-1918
5. Y.-Y. Lin, A. Dodabalapur, R. Sarpeshkar, Z. Bao, W. Li, K. Baldwin, V. R. Raju, H. E. Katz, Appl. Phys. Lett. 74, 2714 (1999). apl APPLAB 0003-6951
6. C. J. Drury, C. M. J. Mutsaers, C. M. Hart, M. Matters, D. M. Leeuw, Appl. Phys. Lett. 73, 108 (1998). apl APPLAB 0003-6951
7. H. Sirringhaus, N. Tessler, R. H. Friend, Science 280, 1741 (1998). sci SCIEAS 0036-8075
8. A. R. Brown, C. P. Jarrett, D. M. de Leeuw, M. Matters, Synth. Met. 88, 37 (1995). sym SYMEDZ 0379-6779
9. H. Klauk, D. J. Gundlach, Th. N. Jackson, IEEE Electron Device Lett. 20, 289 (1999). edl EDLEDZ 0741-3106
10. A. Assadi, C. Svensson, M. Willander, O. Inganäs, Appl. Phys. Lett. 53, 195 (1988). apl APPLAB 0003-6951
11. Z. Bao, A. Dodabalapur, A. J. Lovinger, Appl. Phys. Lett. 69, 4108 (1996). apl APPLAB 0003-6951
12. G. Horowitz, R. Hajlaoui, D. Fichou, A. El Kassmi, J. Appl. Phys. 85, 3202 (1999). jap JAPIAU 0021-8979
13. S. Scheinert, G. Paasch, S. Pohlmann, H.-H. Hörhold, R. Stockmann, Solid-State Electron. 44, 845 (2000). sel SSELA5 0038-1101
14. A. R. Brown, A. Pomp, D. M. de Leeuw, D. B. M. Klaassen, E. E. Havinga, P. Herwig, K. Müllen, J. Appl. Phys. 79, 2136 (1996). jap JAPIAU 0021-8979
15. Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, Th. N. Jackson, IEEE Trans. Electron Devices 44, 1325 (1997). etd IETDAI 0018-9383
16. H. Sirringhaus, N. Tessler, D. S. Thomas, P. J. Brown, R. H. Friend, Adv. Solid State Phys. 39, 101 (1999). ads FSTKA2 0430-3393
17. L. Torsi, A. Dodabalapur, H. E. Katz, J. Appl. Phys. 78, 1088 (1995). jap JAPIAU 0021-8979
18. S. Scheinert, G. Paasch, Verh. Dtsch. Phys. Ges. (VI) 36, 207 (2001). ISSN 0420-0195.
19. G. Horowitz and Ph. Delannoy, J. Appl. Phys. 70, 469 (1991). jap JAPIAU 0021-8979
20. G. Horowitz, R. Hajlaoui, H. Bouchriha, R. Bourguiga, M. Hajlaoui, Adv. Mater. 10, 923 (1998). amt ADVMEW 0935-9648
21. L. Aguilhon, J.-P. Bourgoin, A. Barraud, P. Hesto, Synth. Met. 71, 1971 (1995). sym SYMEDZ 0379-6779
22. Scheinert, G. Paasch, P. H. Nguyen, S. Berleb, W. Brütting, Proceeding ESSDERC'2000, Frontier Group, Paris, 2000, p. 444.
23. G. Paasch and S. Scheinert, Synth. Met. 122, 145 (2001). sym SYMEDZ 0379-6779
24. M. A. Alam, A. Dodabalapur, M. R. Pint, IEEE Trans. Electron Devices 44, 332 (1997). etd IETDAI 0018-9383
25. U. S. Zhokhavets, R. Goldhahn, S. Scheinert, G. Gobsch, DPG Frühjahrstagung, Hamburg, 26-30 (March 2001), [ Verhandl Dtsch. Phys. Ges. (VI) 36, 220 (2001)]. ISSN 0420-0195.
26. ATLAS User's Manual: Device Simulation Software (SILVACO International, Santa Clara, CA, 1998).
27. G. Paasch, P. H. Nguyen, S.-L. Drechsler, Synth. Met. 97, 255 (1998). sym SYMEDZ 0379-6779
28. M. A. Alam, A. Dodabalapur, M. R. Pinto, IEEE Trans. Electron Devices 44, 1332 (1997). etd IETDAI 0018-9383
29. P. Barta, J. Sanetra, P. Grybos, S. Niziol, M. Trznadel, Synth. Met. 94, 115 (1998). sym SYMEDZ 0379-6779
30. T-A. Chen, X. Wu, R. D. Rieke, J. Am. Chem. Soc. 117, 233 (1995). acs JACSAT 0002-7863
31. R. Tecklenburg, G. Paasch, S. Scheinert, Adv. Mater. Opt. Electron. 8, 285 (1998). ame AMELE7 1057-9257
32. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).