Influence of substrate surface chemistry on the performance of top-gate organic thin-film transistors

Journal of the American Chemical Society

Volumn 133, Issue 26, 2011, Pages 9968-9971

  Boudinet, Damien ^a   Benwadih, Mohammed ^a   Altazin, Steéphane ^a   Verilhac, Jean Marie ^a   De Vito, Eric ^a   Serbutoviez, Christophe ^a   Horowitz, Gilles ^b   Facchetti, Antonio ^c  

^a CEA GRENOBLE   (France)

^b UNIVERSITÉ PARIS DIDEROT   (France)

^c POLYERA CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL CHARACTERISTIC; CHEMICAL FUNCTIONALIZATION; CONDUCTOR MATERIALS; FIELD-EFFECT MOBILITIES; MECHANICAL SUPPORT; N-CHANNEL; OFF CURRENT; ORGANIC THIN FILM TRANSISTORS; SUBSTRATE SURFACE; TOP-GATE;

CHEMICAL SENSORS; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES; SURFACE CHEMISTRY; TRANSISTORS;

THIN FILM TRANSISTORS;

SILICON DIOXIDE;

ARTICLE; CHEMICAL MODIFICATION; ELECTRIC CONDUCTIVITY; ORGANIC THIN FILM TRANSISTOR; SEMICONDUCTOR; SURFACE PROPERTY; X RAY DIFFRACTION;

EID: 79959864487     PISSN: 00027863     EISSN: 15205126     Source Type: Journal    
DOI: 10.1021/ja2010576     Document Type: Article

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