Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire

Nano Letters

Volumn 11, Issue 11, 2011, Pages 4780-4788

  Tarun, Alvarado ^a,c   Hayazawa, Norihiko ^a,c,f   Ishitobi, Hidekazu ^a,c   Kawata, Satoshi ^a,c,e,f   Reiche, Manfred ^b   Moutanabbir, Oussama ^a,b,d  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^c RIKEN   (Japan)

^d ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^e OSAKA UNIVERSITY   (Japan)

^f JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD DISTRIBUTION; FUNDAMENTAL PROPERTIES; HIGH NUMERICAL APERTURES; HIGH RESOLUTION; IN-PLANE; LINEAR POLARIZATION; LONGITUDINAL OPTICAL; NANO-SCALE SYSTEM; OUT-OF-PLANE; POLARIZED RAMAN SPECTROSCOPY; PRECISE ANALYSIS; SAMPLE GEOMETRY; SILICON NANOWIRES; SINGLE NANOWIRES; STRAIN BEHAVIORS; STRAIN PROFILES; STRAINED SILICON; TENSILE STRAINED SILICON; THIN LAYERS; TRANSVERSE OPTICAL;

PHONONS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; STRAIN;

NANOWIRES;

NANOMATERIAL; SILICON; TITANIUM; TITANIUM DIOXIDE;

ARTICLE; CHEMISTRY; CONFORMATION; MATERIALS TESTING; METHODOLOGY; RAMAN SPECTROMETRY; ULTRASTRUCTURE; YOUNG MODULUS;

ELASTIC MODULUS; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; SILICON; SPECTRUM ANALYSIS, RAMAN; TITANIUM;

EID: 80755189423     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl202599q     Document Type: Article

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