Combining high resolution and tensorial analysis in Raman stress measurements of silicon

Journal of Applied Physics

Volumn 94, Issue 4, 2003, Pages 2729-2740

  Bonera, Emiliano ^a,b   Fanciulli, Marco ^a   Batchelder, David N ^b  

^a LABORATORIO MDM   (Italy)

^b UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DEGREES OF FREEDOM (MECHANICS); MICROELECTRONICS; RAMAN SPECTROSCOPY; STRESS ANALYSIS;

TENSORIAL ANALYSIS;

SILICON;

EID: 0041922530     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1592872     Document Type: Article

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