메뉴 건너뛰기




Volumn 2, Issue 8, 2002, Pages 811-816

Tailoring the Optical Properties of Silicon Nanowire Arrays through Strain

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0038415297     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl0256098     Document Type: Article
Times cited : (99)

References (37)
  • 17
    • 0348106797 scopus 로고    scopus 로고
    • note
    • Colloidal suspensions of silica-silicon samples in anhydrous hexane were excited using the fourth harmonic wave of a Nd:glass laser (Twinkle, Light Conversion Ltd., Vilnius, Lithuania) at 264 nm with a pulse duration of ∼200 fs and energy of ∼5-30 μJ per pulse. PL decay lifetimes were measured at detection wavelengths of 400 ± 18 nm and 640 ± 60 nm and a photomultiplier tube operating at 800 V. PL quantum yields were measured on a Perkin-Elmer LS50B spectrofluorimeter with respect to β-naphthol and rhodamine B that have known quantum yields of 0.15 and 0.7, respectively.
  • 21
    • 0346215584 scopus 로고    scopus 로고
    • note
    • PXRD and surface analysis confirms the ability to control the diameter of the pores and hence the diameter of the nanowire guests. Since these wires are embedded within the pores of a silica matrix (and all evidence suggests that intimate contact exists between the wall atoms and the silicon atoms), these nanocomposite materials should minimize contributions to the PL originating from surface reconstruction. This does not suggest that reconstruction does not occur but will be determined by the precise difference in the band structure at the interfacial sites. The abrupt difference in electronic potential between the guest nanowire and host matrix should act to confine electrons within the nanowire to energy levels that do not lie in the forbidden band-gap between valance and conduction bands. All three silicon-silica composite materials were synthesized under identical conditions in the same apparatus. This was used to prevent contamination of the product materials due to introduction of impurities. In addition, it should be pointed out that if all materials were prepared in the same way and an impurity was present it would not lead to the changes in the PL emission wavelengths observed in this work.
  • 35
    • 0346846174 scopus 로고    scopus 로고
    • note
    • Curved instead of flat surfaces, and the enhanced strain in both silicon dimers at such surfaces and in back-bonds from surface atoms, would be expected to modulate band gap energies. The term "curved" does not imply that the surface consists of a series of "bent" surface planes. Clearly even at these small dimensions these crystalline particles will adapt to the pore confinement by terminating in a series of different surface planes. However, the atoms will be highly strained due to surface tension and confinement related factors due to their unusual structure.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.