Determining the stress tensor in strained semiconductor structures by using polarized micro-Raman spectroscopy in oblique backscattering configuration

Journal of Applied Physics

Volumn 103, Issue 9, 2008, Pages

  Ossikovski, Razvigor ^a   Nguyen, Quang ^a   Picardi, Gennaro ^a   Schreiber, Joachim ^b  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b HORIBA Jobin Yvon Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACKSCATTERING; CRYSTALLOGRAPHY; MICROSTRUCTURE; MOLECULAR ORIENTATION; RAMAN SPECTROSCOPY; STRESS ANALYSIS;

FULL PLANE STRESS TENSOR; PLANE STRESS TENSOR; STRAINED SEMICONDUCTOR STRUCTURES; STRESS TENSOR DETERMINATION;

SEMICONDUCTOR MATERIALS;

EID: 43949102412     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2917314     Document Type: Article

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