Charge separation via strain in silicon nanowires

Nano Letters

Volumn 9, Issue 6, 2009, Pages 2418-2422

  Wu, Zhigang ^a   Neaton, J B ^a,b   Grossman, Jeffrey C ^a  

^a University of California   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; CHARGE SEPARATIONS; ELECTRONS AND HOLES; HOMOJUNCTION; MORPHOLOGY CONTROL; NANO SCALE; SILICON NANOWIRES; SMALL-DIAMETER; STRAINED SILICON NANOWIRES; THERMALIZATION;

ELECTRIC WIRE; NANOWIRES;

SEPARATION;

EID: 66749096067     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl9010854     Document Type: Article

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