Theory and experiment of large numerical aperture objective Raman microscopy: Application to the stress-tensor determination in strained cubic materials

Journal of Raman Spectroscopy

Volumn 39, Issue 5, 2008, Pages 661-672

  Ossikovski, Razvigor ^a   Nguyen, Quang ^a   Picardi, Gennaro ^a   Schreiber, Joachim ^b   Morin, Pierre ^c  

^a LABORATOIRE DE PHYSIQUE DES INTERFACES ET DES COUCHES MINCES   (France)

^b HORIBA LTD   (Japan)

^c STMICROELECTRONICS   (France)

Author keywords

Numerical aperture; Raman microscopy; Semiconductor; Stress

Indexed keywords

MICROELECTRONICS; SILICON ON INSULATOR TECHNOLOGY;

CHARACTERIZATION TECHNIQUES; CUBIC MATERIALS; MICRO-RAMAN; NUMERICAL APERTURE; OPTICAL PHONON PEAK; RAMAN BACKSCATTERING; RAMAN MICROSCOPY; SEMICONDUCTOR STRUCTURE; STRESS SENSITIVE; STRESS TENSORS;

STRESS TENSOR;

EID: 51549098260     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.1911     Document Type: Article

References (28)

1. Weber WH, Merlin R (eds). Ramon Scattering in Materials Science, Springer Series in Materials Science, vol. 42. Springer Verlag: Berlin, 2000; and references therein.
2. Turrell G, Corset J (eds). Raman Microscopy. Developments and Applications. Elsevier: Amsterdam, 1996.
3. Dombrowski KF, De Wolf I, Dietrich B. Appl. Phys. Lett. 1999; 75: 2450.
4. Atkinson A, Jain SC. J. Raman Spectrosc. 1999; 30: 885.
5. Bonera E, Fanciulli M, Carnevale G. J. Appl. Phys. 2006; 100: 033516.
6. Bonera E, Fanciulli M, Batchelder DN. J. Appl. Phys. 2003; 94: 2729.
7. Poborchii V, Tada T, Kanayama T. Appl. Phys. Lett. 2006; 89: 233505.
8. Harris SJ, O'Neill AE, Yang W, Gustafson P, Boileau J, Weber WH, Majumdar B, Ghosh S. J. Appl. Phys. 2004; 96: 7195.
9. Becker M, Scheel H, Christiansen S, Strunk HP. J. Appl. Phys. 2007; 101: 063531.
10. Brueck SRJ, Tsaur B-Y, Fan JCC, Murphy DV, Deutsch TF, Silversmith DJ. Appl. Phys. Lett. 1982; 40: 895.
11. Brunner K, Abstreiter G, Kolbesen BO, Meul HW. Appl. Surf. Sci. 1989; 39: 116.
12. De Wolf I, Maes HE, Jones SK. J. Appl. Phys. 1996; 79: 7148.
13. De Wolf I. Semicond. Sci. Technol. 1996; 11: 139.
14. De Wolf I. J. Raman Spectrosc. 1999; 30: 877.
15. McCarthy J, Bhattacharya S, Perova TS, Moore RA, Gamble H, and Armstrong BM, Scanning 2004; 26: 235.
16. Narayanan S, Kalidindi SR, Schadler LS. J. Appl. Phys. 1997; 82: 2595.
17. Ganesan S, Maradudin AA, Oitmaa J. Ann. Phys. 1970; 56: 556.
18. Anastassakis E. In Light Scattering in Semiconductor Structures and Superlattices, Lockwood DJ, Young JF (eds). Plenum Press: New York, 1991.
19. Anastassakis E. J. Appl. Phys. 1997; 82: 1582.
20. Nye JF. Physical Properties of Crystals. Clarendon Press: Oxford, 1985.
21. Anastassakis E, Raptis YS. J. Appl. Phys. 1985; 57: 920.
22. Hopkins JB, Farrow LA. J. Appl. Phys. 1986; 59: 1103.
23. Loechelt GH, Cave NG, Menéndez J. J. Appl. Phys. 1999; 86: 6164.
24. Ossikovski R, Nguyen Q, Picardi G, Schreiber J. Submitted to J. Appl. Phys..
25. Nakashima S, Inoue Y, Miyauchi M, Mitsuishi A, Nishimura T, Fukumoto T, Akasaka Y. J. Appl. Phys. 1983; 54: 2611.
26. Deb SK, Bansal ML, Roy AP. Appl. Spectrosc. 1984; 38: 500.
27. Brémard C, Laureyns J, Merlin J-C, Turrell G. J. Raman Spectrosc. 1987; 18: 305.
28. Press WH, Flannery BP, Teukolsky SA, Vetterling WT. Numerical Recipes in Pascal. Cambridge University Press: Cambridge, 1989.