Nanoscale patterning induced strain redistribution in ultrathin strained Si layers on oxide

Nanotechnology

Volumn 21, Issue 13, 2010, Pages

  Moutanabbir, O ^a,b   Reiche, M ^a   Hahnel A ^a   Erfurth, W ^a   Gosele U ^a   Motohashi, M ^b   Tarun, A ^b   Hayazawa, N ^b   Kawata, S ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b RIKEN   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE STUDIES; FREE SURFACES; HYDROGEN IONS; INDUCED STRAIN; INITIAL STRAINS; LATERAL DIMENSION; MICRO RAMAN SPECTROSCOPY; NANO-DEVICES; NANOSCALE PATTERNING; SI SUBSTRATES; SIGE VIRTUAL SUBSTRATES; STRAIN BEHAVIORS; STRAINED LAYERS; STRAINED-SI; THREE DIMENSIONAL FINITE ELEMENTS; ULTRA-THIN;

LITHOGRAPHY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; RAMAN SPECTROSCOPY; SILICON; SILICON WAFERS; THREE DIMENSIONAL; WAFER BONDING;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77949348047     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/13/134013     Document Type: Article

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